...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Experimental and Theoretical Physics >Optical Transitions on a Type II Semiconductor Interface in the Empirical Tight-Binding Theory
【24h】

Optical Transitions on a Type II Semiconductor Interface in the Empirical Tight-Binding Theory

机译：基于经验紧密结合理论的II型半导体接口上的​​光学跃迁

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

A tight-binding theory is elaborated for multilayer semiconductor heterostructures of type II in which the states of electrons and holes are dimensionally quantized in adjacent layers and overlap in a narrow region near the interface. The major effort is focused on the calculation of linear photoluminescence polarization induced by the anisotropy of chemical bonds on the ideal interface under the radiation along the axis of growth. An expression for the matrix element of the optical transition on the type-II interface under arbitrary polarization of the emitted photon is obtained. The treatment is based on the sp~3 tight-binding model. The effect of the interface tight-binding parameters considered as free ones on the linear photoluminescence polarization is analyzed. The theory allows for the giant linear photoluminescence polarization discovered in the ZnSe/BeTe heterostructure; it also predicts that the polarization plane usually coincides with the plane containing the chemical bonds at the heterojunction.
机译：对于类型II的多层半导体异质结构，提出了一种严格的结合理论，其中电子和空穴的状态在相邻层中的尺寸被量化，并且在靠近界面的狭窄区域中重叠。主要的工作集中在线性光致发光极化的计算上，该线性光致发光极化是由沿生长轴的辐射下理想界面上化学键的各向异性引起的。得到了在发射光子的任意偏振下II型界面上的光学跃迁的矩阵元素的表达式。该处理基于sp〜3紧密绑定模型。分析了作为自由参数的界面紧密结合参数对线性光致发光偏振的影响。该理论允许在ZnSe / BeTe异质结构中发现巨大的线性光致发光极化。它也预测极化平面通常与异质结处包含化学键的平面重合。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号