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首页> 外文期刊>Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena >Analysis of grit cut depth in fixed-abrasive diamond wire saw slicing single crystal silicon
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Analysis of grit cut depth in fixed-abrasive diamond wire saw slicing single crystal silicon

机译：固定磨料金刚石线锯切单晶硅的砂粒切深分析

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摘要

A mathematical model to calculate the grit average cut depth in wire sawing single crystal silicon was founded. So the grit average cut depths were calculated theoretically by choosing different process parameters, and influences of process parameters on grit cut depths of slicing silicon crystal were analyzed. Analysis results indicate that the grit average cut depth relates to the silicon mechanical properties, grit shape and size, wire speed and ingot feed speed, etc. And there is a monotone increasing non-linear correlation between grit average cut depth and the ratio i value of ingot feed speed and wire speed, when the i value is lower, the average grit cut depth is lower.
机译：建立了计算线切割单晶硅砂粒平均切削深度的数学模型。因此，通过选择不同的工艺参数，从理论上计算出砂砾的平均切深，并分析了工艺参数对切片硅晶体切屑深度的影响。分析结果表明，砂粒平均切削深度与硅的机械性能，砂粒形状和尺寸，焊丝速度和铸锭进给速度等有关。砂粒平均切削深度与比率i值之间存在单调递增的非线性关系。锭进给速度和焊丝速度的关系，当i值较低时，平均砂粒切削深度较低。

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