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首页> 外文期刊>Journal of Korean Institute of Metal and Materials >Effects of Nitrogen Partial Pressures During RF Magnetron Sputtering on the Crystal Structure and Growth Rate of c-BN Films
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Effects of Nitrogen Partial Pressures During RF Magnetron Sputtering on the Crystal Structure and Growth Rate of c-BN Films

机译：射频磁控溅射过程中氮气分压对c-BN薄膜晶体结构和生长速率的影响

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摘要

The types of atmospheric gases used in sputtering deposition are crucial in the formation of cubic boron nitride (c-BN) films. c-BN films were deposited on an Si wafer using radio frequency (RF) magnetron sputtering with a B_4C target at N_2/Ar+N_2 ratios of 0.2, 0.4, 0.6, 0.8, and 1.0. The characteristics of the c-BN layer were significantly enhanced at a nitrogen partial pressure ratio of 0.6. The highest growth rate and the lowest surface roughness were observed at this condition. The c-BN phase structure was clearly identified by the binding energy of the B1s and N1s along with X-ray diffraction patterns of the coated layer. These results indicate that the growth rate and crystal structure of the C-BN films are significantly affected under certain atmospheric gas conditions.
机译：溅射沉积中使用的大气类型对立方氮化硼（c-BN）膜的形成至关重要。使用射频（RF）磁控溅射将c_BN膜沉积在Si晶片上，并以0.2、0.4、0.6、0.8和1.0的N_2 / Ar + N_2比率使用B_4C靶。在氮的分压比为0.6时，c-BN层的特性显着增强。在此条件下观察到最高的生长速率和最低的表面粗糙度。 c-BN相结构可以通过B1和N1的结合能以及涂层的X射线衍射图清楚地确定。这些结果表明，在某些大气条件下，C-BN薄膜的生长速率和晶体结构受到显着影响。

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