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首页> 外文期刊>Journal of Low Temperature Physics >Normal and Superconducting State Properties of Doped CePt_(3)Si
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Normal and Superconducting State Properties of Doped CePt_(3)Si

机译：掺杂CePt_（3）Si的常态和超导态性质

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摘要

We report on X-ray powder diffraction, magnetic susceptibility, electrical resistivity, and specific heat measurements on samples of Ce_(1-x)La_(x)Pt_(3)Si and CePt_(3)Si_(1+delta) in order to better understand this unusual heavy Fermion superconductor's normal and superconducting state properties. By suppressing the antiferromagnetic transition, T_(N) velence 2.2 K, using La-doping on the Ce-site in CePt_(3)Si, we find that in Ce_(1-x)La_(x)Pt_(3)Si, x >= 0.8, rho, chi, and C/T show non-Fermi liquid temperature dependences. C/T approx T~(alpha) with alpha approx 1 for the temperature range of 0.3-3 K while low-temperature (2-20 K) susceptibility data follow 1/chi - 1/(chi)_(0) velence aT~(eta) behavior with eta velence 0.36. In addition, chi and C/T exhibit single-ion behavior in this composition range (x >= 0.8), i.e. the measured values expressed per Ce-mole are independent of x. Via doping the Si-site with a small excess--2-4percent--of Si, we present specific heat data for the bulk superconducting transition at T_(c) approx 0.8 K showing that this excess sharpens the transition, obviating the need for annealing. Measurements of the X-ray diffraction patterns, rho, chi, and C/T of these CePt_(3)Si_(1+delta) samples, when compared to similar measurements on annealed CePt_(3)Si samples, indicate that the microscopic mechanism for the strengthening and sharpening of (DELTA)C(T_(c)) with Si-excess may be similar to that responsible in the annealed material.
机译：我们按顺序报告了Ce_（1-x）La_（x）Pt_（3）Si和CePt_（3）Si_（1 + delta）样品的X射线粉末衍射，磁化率，电阻率和比热测量结果以便更好地了解这种不寻常的重费米子超导体的常态和超导状态。通过在CePt_（3）Si中的Ce位置使用La掺杂来抑制反铁磁跃迁T_（N）velence 2.2 K，我们发现在Ce_（1-x）La_（x）Pt_（3）Si中， x> = 0.8，rho，chi和C / T显示非费米液体温度依赖性。 C / T约为T〜α，在0.3-3 K的温度范围内，α约为1，而低温（2-20 K）磁化率数据遵循1 / chi-1 /（chi）_（0）声速aT行为= 0.36。此外，chi和C / T在此组成范围内表现出单离子行为（x> = 0.8），即，每Ce摩尔表示的测量值与x无关。通过向Si部位掺杂少量的Si（2-4％），我们给出了T_（c）处约0.8 K的块体超导转变的比热数据，表明这种过量使转变更加尖锐，从而消除了对退火。与退火的CePt_（3）Si样品的类似测量结果相比，这些CePt_（3）Si_（1 + delta）样品的X射线衍射图，rho，chi和C / T的测量结果表明，微观机理Si过量对ΔC（T_（c））的增强和锐化的作用可能类似于退火材料中的作用。

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