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首页> 外文期刊>Journal of Materials Science Letters >Corrosion behaviors of sintered and chemically vapor deposited silicon carbide ceramics in water at 360 ℃
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Corrosion behaviors of sintered and chemically vapor deposited silicon carbide ceramics in water at 360 ℃

机译：烧结和化学气相沉积碳化硅陶瓷在360℃水中的腐蚀行为

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摘要

Advanced ceramics such as silicon carbide (SiC) and silicon nitride (Si_3N_4) have attracted much attention in recent years due to their potential as structural ceramics, including use in high-temperature and high-pressure water nuclear reactor plants [1, 2]. Although a number of studies have reported on high-temperature oxidation and corrosion in air or combustion environments [3-6], there have been few reports concerning the corrosion behavior in high-temperature and high-pressure water [1, 2, 7-10]. The corrosion behavior of SiC and Si_3N_4 in high-temperature water must be elucidated before hey can be considered for the components of nuclear power plants. In high-temperature air, the Si-based ceramics oxidize to form a surface oxide (SiO_2) layer. The protective SiO_2 layer limits the further oxidation of the Si-based ceramics if the partial pressure of O-2 is high enough to give a passive oxidation regime [3]. The SiO_2 layer, however, is believed to the unstable above the critical point of water [2, 11].
机译：近年来，诸如碳化硅（SiC）和氮化硅（Si_3N_4）之类的先进陶瓷由于其作为结构陶瓷的潜力而备受关注，包括在高温高压水核反应堆中的使用[1、2]。尽管许多研究报告了在空气或燃烧环境中的高温氧化和腐蚀[3-6]，但很少有关于高温和高压水中的腐蚀行为的报告[1,2,7- 10]。必须考虑SiC和Si_3N_4在高温水中的腐蚀行为，然后才能考虑将其用作核电站的组件。在高温空气中，Si基陶瓷氧化形成表面氧化物（SiO_2）层。如果O-2的分压足够高以提供被动氧化机制，则SiO_2保护层会限制Si基陶瓷的进一步氧化[3]。然而，据信SiO_2层在水的临界点以上不稳定[2，11]。

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