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首页> 外文期刊>Journal of Macromolecular Science. Pure and Applied Chemistry >Study of Thin Polymeric Film Deposited by the PECVD Process for use at 193 nm
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Study of Thin Polymeric Film Deposited by the PECVD Process for use at 193 nm

机译：PECVD工艺在193 nm下沉积的聚合物薄膜的研究

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摘要

A plasma enhanced chemical vapor deposition (PECVD) reactor was used to deposit thin polymeric films with high absorption at 193 nm. The reactor is suitable to deposit uniform and pinhole free thin polymeric films with conformality over 95%. Conformal films with thickness as low as 200 ? have been deposited on silicon, glass, and quartz substrates, as well as silicon oxide, silicon nitrate, and aluminum films. Deposited films had variations in thickness of 3 to 5% over an area of 8 inches in diameter. Thin films deposited on silicon substrates under varying levels of RF power were scanned using the AFM technique. The measurements show increasing surface roughness of the scanned samples as the RF power increases.
机译：等离子体增强化学气相沉积（PECVD）反应器用于沉积在193 nm具有高吸收率的聚合物薄膜。该反应器适于沉积均匀性和95％以上的均匀且无针孔的聚合物薄膜。保形膜厚度低至200？已将其沉积在硅，玻璃和石英基板以及氧化硅，硝酸硅和铝膜上。沉积的膜在直径8英寸的区域内厚度变化为3-5％。使用AFM技术扫描沉积在硅基板上的RF功率变化的薄膜。测量结果表明，随着射频功率的增加，扫描样品的表面粗糙度也随之增加。

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