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首页> 外文期刊>Journal of nanoparticle research: An interdisciplinary forum for nanoscale science and technology >Growth of InGaAs-capped InAs quantum dots characterized by atomic force microscope and scanning electron microscope
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Growth of InGaAs-capped InAs quantum dots characterized by atomic force microscope and scanning electron microscope

机译：原子力显微镜和扫描电子显微镜表征的InGaAs覆盖的InAs量子点的生长

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摘要

Atomic force microscopy (AFM) is typically used to measure the quantum dot shape and density formed by lattice mismatched epitaxial growth such as InAs on GaAs. However, AFM images are distorted when two dots are situated in juxtaposition with a distance less than the AFM tip width. Scanning electron Microscope (SEM) is much better in distinguishing the dot density but not the dot height. Through these measurements of the growth of InxGa1-xAs cap layer on InAs quantum dots, it was observed that the InGaAs layer neither covered the InAs quantum dots and wetting layer uniformly nor 100% phase separates into InAs and GaAs grown on InAs quantum dots and wetting layer, respectively.
机译：原子力显微镜（AFM）通常用于测量由晶格失配的外延生长（例如GaAs上的InAs）形成的量子点形状和密度。但是，当两个点并列放置且距离小于AFM笔尖宽度时，AFM图像会失真。扫描电子显微镜（SEM）在区分点密度而不是点高方面要好得多。通过这些对InAs量子点上InxGa1-xAs盖层生长的测量，可以观察到InGaAs层既不均匀地覆盖InAs量子点和润湿层，也不100％相分离在InAs量子点上生长的InAs和GaAs和润湿层。

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