Growth of Highly Oriented ZnO Nanowires on GaN Substrates for Electronic and Optical Sensor Applications

Ashok K. Sood; Yash R. Puri; Zhong L. Wang; Dennis L. Polla; Martin B. Soprano

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Growth of Highly Oriented ZnO Nanowires on GaN Substrates for Electronic and Optical Sensor Applications

机译：用于电子和光学传感器应用的GaN衬底上高取向ZnO纳米线的生长

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In this Paper we present growth and characterization results of highly oriented ZnO nanowires grown on wide bandgap GaN substrates. Experimental results on the ZnO nanowires grown on p-GaN are presented with growth morphology and dimensionality control. We also present experimental results on these nanowire arrays such as I-V measurements and UV sensitivity measurements. The ZnO nanowires can be used for a variety of nanoscale optical and electronics applications.

机译：在本文中，我们介绍了在宽带隙GaN衬底上生长的高取向ZnO纳米线的生长和表征结果。提出了在p-GaN上生长的ZnO纳米线的实验结果，并给出了生长形态和尺寸控制。我们还介绍了这些纳米线阵列的实验结果，例如I-V测量和UV灵敏度测量。 ZnO纳米线可用于各种纳米级光学和电子应用。

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《Journal of nanoscience and nanotechnology》 |2010年第3期|共3页
作者
Ashok K. Sood; Yash R. Puri; Zhong L. Wang; Dennis L. Polla; Martin B. Soprano;
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正文语种 eng
中图分类特种结构材料;
关键词
ZnO; Nanowires; P-n Junctions; UV Imaging; Highly Oriented ZnO Growth; Electronic Applications;

机译：ZnO;纳米线;P-n结;UV成像;高度定向的ZnO生长;电子应用;

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1. Growth of Highly Oriented ZnO Nanowires on GaN Substrates for Electronic and Optical Sensor Applications [J] . Ashok K. Sood, Yash R. Puri, Zhong L. Wang, Journal of nanoscience and nanotechnology . 2010,第3期

机译：用于电子和光学传感器应用的GaN衬底上高取向ZnO纳米线的生长
2. The use of pulsed laser deposited seed layers for the aqueous solution growth of highly oriented ZnO nanowires on sapphire substrates at 95 °C: Study of their photocatalytic activity in terms of octadecanoic (stearic) acid degradation [J] . G. Kenanakis, M. Pervolaraki, Giapintzakis Applied Catalysis, A. General: An International Journal Devoted to Catalytic Science and Its Applications . 2013,第Null期

机译：脉冲激光沉积种子层在95°C下用于蓝宝石衬底上高度取向的ZnO纳米线在水溶液中的生长：根据十八酸（硬脂酸）降解研究其光催化活性
3. Catalyst-free thermally-evaporated growth and optical properties of ZnO nanowires on Si, GaN and sapphire substrates [J] . Tran Van Khai, Dong Sub Kwak, Yong Jung Kwon, Crystal Research and Technology: Journal of Experimental and Industrial Crystallography . 2013,第2期

机译：Si，GaN和蓝宝石衬底上ZnO纳米线的无催化剂热蒸发生长和光学性质
4. Epitaxial MOVPE growth of highly c-axis oriented InGaN/GaN films on ZnO-buffered Si (111) substrates [C] . A. Ougazzaden, D. J. Rogers, F. Hosseini Teherani, Oxide-based materials and devices . 2010

机译：在ZnO缓冲的Si（111）衬底上高c轴取向的InGaN / GaN薄膜的外延MOVPE生长
5. A first-principles study of structural, electronic and optical properties of GaN, ZnO and (GaN)1--x(ZnO) x. [D] . Liu, Jian. 2015

机译：GaN，ZnO和（GaN）1-x（ZnO）x的结构，电子和光学性质的第一性原理研究。
6. Epitaxial Growth of GaN Core and InGaN/GaN MultipleQuantum Well Core/Shell Nanowires on a Thermally Conductive BerylliumOxide Substrate [O] . MuhammadAli Johar, Aadil Waseem, Mostafa Afifi Hassan, 2020

机译：GaN核和InGaN / GaN多重外延生长导热铍上的量子阱核/壳纳米线氧化物基板
7. Highly oriented GaN films grown on ZnO buffer layer over quartz substrates by reactive sputtering of GaAs target [O] . YADAV BRAJESH S, SINGH SUKHVINDER, GANGULI TAPAS, 2008

机译：通过反应溅射GaAs靶在石英衬底上的ZnO缓冲层上生长的高取向GaN膜

Growth of Highly Oriented ZnO Nanowires on GaN Substrates for Electronic and Optical Sensor Applications

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