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首页> 外文期刊>Journal of nanoscience and nanotechnology >Nanotexturing Process on Microtextured Surfaces of Silicon Solar Cells by SF_6/O_2 Reactive Ion Etching
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Nanotexturing Process on Microtextured Surfaces of Silicon Solar Cells by SF_6/O_2 Reactive Ion Etching

机译：SF_6 / O_2反应离子刻蚀在硅太阳能电池微织构表面上的纳米织构工艺

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摘要

We investigated a nanotexturing process on the microtextured surface of single crystalline silicon solar cell by the reactive ion etching process in SF_6/O_2 mixed gas ambient. P-type Si wafer samples were prepared using a chemical wet etching process to address saw damage removal and achieve microtexturing. The microtextured wafers were further processed for nanotexturing by exposure to reactive ions within a circular tray of wafer carrier containing many small holes for uniform etching. As the dry etching times were increased to 2, 4 and finally to 8 min, surface structures were observed in a transition from nanoholes to nanorods, and a variation in wafer color from dark blue to black. The surface nanostructures showed a lowered photoreflectance and enhanced quantum efficiency within the visible light region with wavelengths of less than 679 nm. The nanohole structure etched for 2 min showed enhanced conversion efficiency when compared to the bare sample; however, the nanorod structure etched for 8 min exhibited the decreased efficiency with a reduced short circuit current, indicating that the surface nanostructural damage with the enlarged nanoperimetric surface area is sensitive to surface passivation from the surface recombination process.
机译：我们在SF_6 / O_2混合气体环境中，通过反应离子刻蚀工艺研究了单晶硅太阳能电池微织构表面的纳米织构工艺。使用化学湿法刻蚀工艺制备了P型硅晶片样品，以消除锯齿损伤并实现微纹理化。通过暴露于包含许多小孔以均匀蚀刻的晶片载体的圆形托盘内的反应离子，将微织构的晶片进一步加工用于纳米织构。随着干蚀刻时间增加到2、4，最后到8分钟，在从纳米孔到纳米棒的过渡中观察到表面结构，晶片颜色也从深蓝色变为黑色。表面纳米结构在波长小于679 nm的可见光区域内显示出较低的光反射率和增强的量子效率。与裸样品相比，蚀刻2分钟的纳米孔结构显示出提高的转化效率;然而，刻蚀8分钟的纳米棒结构在降低的短路电流下显示出降低的效率，这表明具有增大的纳米周表面积的表面纳米结构损伤对来自表面重组过程的表面钝化敏感。

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