Chemical vapour deposition of II-VI semiconductor thin films using M[((TePPr2)-Pr-i)(2)N](2) (M = Cd, Hg) as single-source precursors

Garje SS; Ritch JS; Eisler DJ; Afzaal M; OBrien P; Chivers T

首页> 外文期刊>Journal of Materials Chemistry: An Interdisciplinary Journal dealing with Synthesis, Structures, Properties and Applications of Materials, Particulary Those Associated with Advanced Technology >Chemical vapour deposition of II-VI semiconductor thin films using M[((TePPr2)-Pr-i)(2)N](2) (M = Cd, Hg) as single-source precursors

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Chemical vapour deposition of II-VI semiconductor thin films using M[((TePPr2)-Pr-i)(2)N](2) (M = Cd, Hg) as single-source precursors

机译：以M [（（（TePPr2）-Pr-i）（2）N]（2）（M = Cd，Hg）作为单源前体的II-VI半导体薄膜的化学气相沉积

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The aerosol-assisted chemical vapour deposition (AACVD) of CdTe has been carried out using Cd[(TePiPr(2))(2)N](2) at substrate temperatures between 375 and 475 degrees C. XRD shows the formation of cubic CdTe between 425 and 475 degrees C. At low deposition temperature (375 degrees C), a mixture of hexagonal tellurium and cubic cadmium telluride is observed. SEM images reveal that the growth temperatures do not have a profound effect on the morphologies of films. Surface analysis by XPS of films deposited at 475 degrees C showed the growth of Te-rich films. The AACVD of Hg[(TePiPr(2))(2)N](2) resulted in deposition of hexagonal tellurium.

机译：CdTe的气溶胶辅助化学气相沉积（AACVD）已使用Cd [（TePiPr（2））（2）N]（2）在375至475摄氏度的基材温度下进行。XRD显示立方CdTe的形成温度在425至475摄氏度之间。在低沉积温度（375摄氏度）下，观察到六方碲和立方碲化镉的混合物。 SEM图像表明，生长温度对膜的形态没有深远的影响。通过XPS对在475摄氏度下沉积的薄膜进行表面分析表明，富Te薄膜的生长。 Hg [（TePiPr（2））（2）N]（2）的AACVD导致六方碲的沉积。

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《Journal of Materials Chemistry: An Interdisciplinary Journal dealing with Synthesis, Structures, Properties and Applications of Materials, Particulary Those Associated with Advanced Technology》 |2006年第10期|共4页
作者
Garje SS; Ritch JS; Eisler DJ; Afzaal M; OBrien P; Chivers T;
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正文语种 eng
中图分类工程材料学;
关键词
CADMIUM TELLURIDE; MOCVD; COMPLEXES; GROWTH; JUNCTIONS; ZINC;

机译：碲化镉;MOCVD;复合物;生长;结;锌;

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1. Chemical vapour deposition of II-VI semiconductor thin films using M[((TePPr2)-Pr-i)(2)N](2) (M = Cd, Hg) as single-source precursors [J] . Garje SS, Ritch JS, Eisler DJ, Journal of Materials Chemistry: An Interdisciplinary Journal dealing with Synthesis, Structures, Properties and Applications of Materials, Particulary Those Associated with Advanced Technology . 2006,第10期

机译：以M [（（（TePPr2）-Pr-i）（2）N]（2）（M = Cd，Hg）作为单源前体的II-VI半导体薄膜的化学气相沉积
2. Deposition of CdSe thin films using a novel single-source precursor; [MeCd{((SePPr2)-Pr-i)(2)N}](2) [J] . Afzaal M., Crouch D., Malik MA., Journal of Materials Chemistry: An Interdisciplinary Journal dealing with Synthesis, Structures, Properties and Applications of Materials, Particulary Those Associated with Advanced Technology . 2003,第4期

机译：使用新型单源前驱体沉积CdSe薄膜; [MeCd {（（（SePPr2）-Pr-i）（2）N}]（2）
3. Deposition of Cadmium SulphideThin Films from the Single-source Precursor Bis(diethylmonothiocarbamato)cadmium(Ⅱ) by Low-pressure Metalorganic Chemical Vapour Deposition [J] . M. Chunggaze, M. Azad Malik, P. OBrien Advanced Materials for Optics and Electronics . 1997,第6期

机译：低压金属有机化学气相沉积法从单源前驱体双（二乙基单硫代氨基甲酸酯）镉（Ⅱ）中沉积硫化镉薄膜
4. Metal-Organic Chemical Vapour Deposition of II-VI Semiconductor Thin Films Using Single-Source Approach [C] . Mohammad Afzaal, David Crouch, Paul OBrien, Symposium on Materials for Energy Storage, Generation and Transport, Apr 2-4, 2002, San Francisco, California . 2002

机译：使用单源方法的II-VI半导体薄膜的金属有机化学气相沉积
5. Chemical vapour deposition of tungsten oxide thin films from single-source precursors. [D] . Cross, Warren Bradley. 2003

机译：从单源前驱体化学气相沉积氧化钨薄膜。
6. A comprehensive understanding of the chemical vapour deposition of cadmium chalcogenides using Cd(C6H5)2PSSe2 single-source precursor: a density functional theory approach [O] . Francis Opoku, Noah Kyame Asare-Donkor, Anthony Adimado Adimado 2016

机译：使用Cd （C6H5）2PSSe 2单源前驱物全面了解硫属镉化物的化学气相沉积：密度泛函理论方法
7. Bis(piperidinedithiocarbamato)pyridinecadmium(II) as a single-source precursor for the synthesis of CdS nanoparticles and aerosol-assisted chemical vapour deposition (AACVD) of CdS thin films [O] . Mlowe, Sixberth, Lewis, David, Malik, M Azad, 2014

机译：双（哌啶二硫代氨基甲酸）吡啶镉（II）作为单源前体合成Cds纳米粒子和气溶胶辅助化学气相沉积（aaCVD）的Cds薄膜

Chemical vapour deposition of II-VI semiconductor thin films using M[((TePPr2)-Pr-i)(2)N](2) (M = Cd, Hg) as single-source precursors

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