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Time-Modulated Chemical Vapor Deposition of Diamond Films

机译：金刚石膜的时间调制化学气相沉积

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摘要

This article investigates the role of substrate temperature in the deposition of diamond films using a newly developed time-modulated chemical vapor deposition (TMCVD) process. TMCVD was used to deposit polycrystalline diamond coatings onto silicon substrates using hot-filament chemical vapor deposition system. In this investigation, the effect of (a) substrate temperature and (b) methane (CH4) content in the reactor on diamond film deposition was studied. The distinctive feature of the TMCVD process is that it time-modulates CH4 flow into the reactor during the complete growth process. It was noted that the substrate temperature fluctuated during the CH4 modulations, and this significantly affected some key properties of the deposited films. Two sets of samples have been prepared, in each of which there was one sample that was prepared while the substrate temperature fluctuated and the other sample, which was deposited while maintaining the substrate temperature, was fixed. To keep the substrate temperature constant, the filament power was varied accordingly. In this article, the findings are discussed in terms of the CH4 content in the reactor and the substrate temperature. It was found that secondary nucleation occurred during the high timed CH4 modulations. The as-deposited films were characterized for morphology, diamond-C phase purity, hardness, and surface roughness using scanning electron microscopy, Raman spectroscopy, Vickers hardness testing, and surface profilometry, respectively.
机译：本文研究了衬底温度在使用新开发的时间调制化学气相沉积（TMCVD）工艺沉积金刚石膜中的作用。 TMCVD用于使用热丝化学气相沉积系统将多晶金刚石涂层沉积在硅基底上。在这项研究中，研究了（a）衬底温度和（b）反应器中甲烷（CH4）含量对金刚石膜沉积的影响。 TMCVD工艺的显着特征是它在整个生长过程中对进入反应器的CH4流量进行时间调节。值得注意的是，在CH4调制过程中，基板温度会发生波动，这会严重影响沉积膜的一些关键性能。制备了两组样品，其中每组都有一个在基板温度波动时制备的样品，而另一组样品是在保持基板温度的同时进行沉积的。为了保持衬底温度恒定，相应地改变了灯丝功率。在本文中，将根据反应器中CH4的含量和底物温度对发现进行讨论。发现在高定时CH4调制期间发生了二次成核。分别使用扫描电子显微镜，拉曼光谱，维氏硬度测试和表面轮廓测定法对沉积后的薄膜的形貌，金刚石-C相纯度，硬度和表面粗糙度进行表征。

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