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首页> 外文期刊>Journal of Materials Engineering and Performance >Degradation of TiN Coatings on Inconel 617 and Silicon Wafer Substrates Under Pulsed Laser Ablation
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Degradation of TiN Coatings on Inconel 617 and Silicon Wafer Substrates Under Pulsed Laser Ablation

机译：脉冲激光烧蚀对Inconel 617和硅晶片基板上TiN涂层的降解

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摘要

The degradation behavior of TiN coatings on Inconel 617 and silicon (Si) wafer substrates was compared following Nd:YAG pulsed laser ablation to apply thermomechanical stress. Surface cracks and pores were observed on the TiN coating on the Inconel 617 after five pulses, and melting of the coating was occurred over ten pulses. The TiN coating on the Si wafer also showed surface cracks and pores, but there was no surface melting. As the pulses were increased, the surface roughness of the TiN coating on Inconel 617 increased more than the TiN coating on the Si wafer, and interfacial cracking was the dominant degradation behavior on the Si wafer. The hardness of the TiN coating decreased below 50% of its initial value (2200 HK) after five pulses on the Inconel 617, whereas over 70% of the initial value (2400 HK) was maintained on the Si wafer. The TiN coating on Inconel 617 showed diffusion of substrate atoms to the surface, while Si was not found in the TiN coating on the Si wafer even after 25 pulses. It was determined that the decrease in hardness was influenced by the cracking behavior and the diffusion of atoms from the substrate.
机译：在Nd：YAG脉冲激光烧蚀后施加热机械应力后，比较了Inconel 617和硅（Si）晶片基板上TiN涂层的降解行为。五个脉冲后，在Inconel 617上的TiN涂层上观察到表面裂纹和孔，并且十个脉冲后发生了涂层熔化。 Si晶片上的TiN涂层也显示出表面裂纹和孔洞，但没有表面熔化。随着脉冲的增加，Inconel 617上的TiN涂层的表面粗糙度比Si晶片上的TiN涂层增加更多，而界面裂纹是Si晶片上的主要降解行为。在Inconel 617上经过五个脉冲后，TiN涂层的硬度降低到其初始值（2200 HK）的50％以下，而在Si晶片上保持了初始值（2400 HK）的70％以上。 Inconel 617上的TiN涂层显示出基体原子扩散到表面，而即使在25个脉冲后，在Si晶片的TiN涂层中也没有发现Si。可以确定，硬度的降低受开裂行为和原子从基体扩散的影响。

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