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首页> 外文期刊>Journal of Materials Engineering and Performance >Effect of Al Doping on Performance of CuGaO2 p-Type Dye-Sensitized Solar Cells
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Effect of Al Doping on Performance of CuGaO2 p-Type Dye-Sensitized Solar Cells

机译：Al掺杂对CuGaO2 p型染料敏化太阳能电池性能的影响

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摘要

The p-type semiconductor Cu(I)-based delafossite transparent conducting oxides are good candidates to be used as hole collectors in dye-sensitized solar cells. The Al-doped CuGaO2 has been synthesized by hydrothermal method and its properties have been investigated as cathode elements in ruthenium dye N719-sensitized solar cells. The photocurrent density (J(sc)) and the open-circuit voltage (V-oc) for 5% Al-doped CuGaO2 microparticles using N719 dye were approximately two times higher than undoped CuGaO2 microparticles. The integration of aluminum dopants in the delafossite structure improves the photovoltaic performance of CuGaO2 thin films, due to the excellent optical transparency of CuGaO2 in the visible range as well as the improved electrical conductivity caused by the apparition of the intrinsic acceptor defect associate (Al(Cu)(center dot center dot)2O(i)'')'' with tetrahedrally coordinated Al on the Cu-site.
机译：p型半导体基于Cu（I）的铜铁矿透明导电氧化物是用作染料敏化太阳能电池中空穴收集器的良好候选者。通过水热法合成了掺铝的CuGaO2，并研究了其性质作为钌染料N719敏化太阳能电池中的阴极元素。使用N719染料的5％Al掺杂CuGaO2微粒的光电流密度（J（sc））和开路电压（V-oc）大约是未掺杂CuGaO2微粒的两倍。由于在可见光范围内CuGaO2的出色光学透明性以及由于固有受体缺陷缔合体（Al（ Cu）（中心点中心点）2O（i）''）''，在Cu位置具有四面体配位的Al。

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