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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Preparation and characterization of SrTiO3/BaTiO3 thin multilayer films deposited on Pt/Ti/SiO2/Si substrate by radio frequency magnetron sputtering
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Preparation and characterization of SrTiO3/BaTiO3 thin multilayer films deposited on Pt/Ti/SiO2/Si substrate by radio frequency magnetron sputtering

机译：射频磁控溅射沉积在Pt / Ti / SiO2 / Si衬底上的SrTiO3 / BaTiO3多层薄膜的制备与表征

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摘要

SrTiO3/BaTiO3 thin films with multilayer structure were deposited on Pt/Ti/SiO2/Si substrates by a double target radio frequency (RF) magnetron sputtering at 500 degrees C. The structure and properties of the SrTiO3/BaTiO3 thin multilayers have been evaluated by X-ray diffraction (XRD), Auger electron spectrometry (AES), scanning electron microscopy (SEM), scanning transmission electron microscopy (STEM), electron diffraction (ED) and polarization-electric field hysteresis loop. The XRD result reveals that the SrTiO3/BaTiO3 thin multilayers with the designed modulation have been accomplished. The lattice strain increases with layer number. According to AES analysis and morphology observation, a discrete interlayer exists at a position between the interface of Pt electrode and SrTiO3.The remanent polarization (P-r) and coercive field (E-c) of SrTiO3/BaTiO3 thin multilayer are 3.0 mu C/cm(2) and 20.0 kV/cm, respectively. In comparison with BaTiO3, the device containing dual layers of SrTiO3/BaTiO3 possesses higher Ec but lower P,. (c) 2005 Elsevier B.V. All rights reserved.
机译：通过在500摄氏度下通过双靶射频（RF）磁控溅射在Pt / Ti / SiO2 / Si衬底上沉积具有多层结构的SrTiO3 / BaTiO3薄膜。通过以下方法评估了SrTiO3 / BaTiO3多层薄膜的结构和性能： X射线衍射（XRD），俄歇电子能谱（AES），扫描电子显微镜（SEM），扫描透射电子显微镜（STEM），电子衍射（ED）和极化电场磁滞回线。 XRD结果表明，已完成了具有设计调制度的SrTiO3 / BaTiO3薄多层膜。晶格应变随层数增加。根据AES分析和形态学观察，Pt电极与SrTiO3的界面处存在离散的中间层.SrTiO3 / BaTiO3薄多层膜的剩余极化（Pr）和矫顽场（Ec）为3.0μC / cm（2 ）和20.0 kV / cm。与BaTiO3相比，包含SrTiO3 / BaTiO3双层的器件具有更高的Ec但更低的Pi。 （c）2005 Elsevier B.V.保留所有权利。

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