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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Origins of optical absorption between 4.8 and 4.9 eV in silica implanted with Si and with O ions
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Origins of optical absorption between 4.8 and 4.9 eV in silica implanted with Si and with O ions

机译：硅和O离子注入的二氧化硅中4.8至4.9 eV之间的光吸收起源

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摘要

We have determined some of the sources of the optical absorption bands between 4.8 and 4.9 eV in Si and O-implanted silica using several ion energies to produce layers of implanted ions with constant concentrations. The concentrations of implanted ions in the implanted layers ranged from > 0.015 at.% to < 3 at.%. Optical absorption was measured from 2.0 to 6.5 eV. Electron paramagnetic resonance measurements were made at similar to 20.3 and 33 GHz for sample temperatures ranging from 77 to 100 K for most measurements. The components identified in the spectra, based on comparison with reported parameters, were, in the Si case, due to E' centers and peroxy radicals. In the 0 case they were due to E' centers, non-bridging oxygen hole centers, peroxy radical centers, and a newly appearing state which we labeled the OS center. By comparing the changes in the absorption at 4.83 eV with the changes in the concentrations of the various electron paramagnetic resonance components and with the reports in the literature, we conclude that there are at least four oxygen related centers and one Si related center absorbing between 4.8 and 4.9 eV. (c) 2006 Elsevier B.V. All rights reserved.
机译：我们使用几种离子能量确定了在Si和O注入的二氧化硅中4.8至4.9 eV之间的光吸收带的某些来源，以产生具有恒定浓度的注入离子层。注入层中的注入离子的浓度范围从> 0.015at。％到<3at。％。测得的光吸收为2.0至6.5 eV。对于大多数测量，样品温度范围为77至100 K，在大约20.3和33 GHz进行电子顺磁共振测量。在硅的情况下，基于与报告参数的比较，光谱中确定的成分是由于E'中心和过氧自由基引起的。在0的情况下，它们是由于E'中心，非桥接氧孔中心，过氧自由基中心和新出现的状态（我们标记为OS中心）引起的。通过将4.83 eV处的吸收变化与各种电子顺磁共振成分的浓度变化进行比较，并与文献报道进行比较，我们得出的结论是，至少有四个氧相关中心和一个与Si相关的中心在4.8之间吸收和4.9 eV。 （c）2006 Elsevier B.V.保留所有权利。

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