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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Influence of thermal annealing on the ultraviolet stability of a-SiC : H thin films deposited from liquid organosilanes
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Influence of thermal annealing on the ultraviolet stability of a-SiC : H thin films deposited from liquid organosilanes

机译：热退火对液态有机硅烷沉积a-SiC：H薄膜紫外线稳定性的影响

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摘要

The photoluminescence (PL) of a-SiC:H thin films, deposited in a plasma enhanced chemical vapor deposition process from liquid organosilane sources degrades under ultraviolet (UV) exposure (325 nm). UV illumination reduces the PL intensity of as-grown films usually to one-half of the initial intensity. The W-induced decay of the PL follows a stretched exponential time dependence. Annealing of the films at about 400 degrees C in nitrogen atmosphere increases both the UV stable and the unstable part of the FL, by a factor 1.5 to 3 dependent on the starting material. We have investigated the annealing behaviour for different starting materials. Best results with respect to reproducible UV-stable PL are obtained for hexamethyldisilazane. Infrared absorption spectra indicate that the UV exposure is accompanied by photo-oxidation, while annealing in inert gas atmosphere results in a decrease of hydrogen-related vibrations. We discuss the structural changes in the a-SiC:H thin films caused by UV illumination and by thermal annealing on the basis of the spectroscopic investigations. (C) 1998 Elsevier Science B.V. All rights reserved. [References: 11]
机译：以等离子增强化学气相沉积法从液态有机硅烷源沉积的a-SiC：H薄膜的光致发光（PL）在紫外线（UV）曝光（325 nm）下降解。紫外线照射可将成膜后的PL强度通常降低至初始强度的一半。 W引起的PL的衰减遵循延长的指数时间依赖性。薄膜在氮气氛中在约400摄氏度下退火，这会增加FL的紫外线稳定部分和不稳定部分，具体取决于原材料的1.5到3倍。我们已经研究了不同原材料的退火行为。对于六甲基二硅氮烷，获得了有关可再现的紫外线稳定PL的最佳结果。红外吸收光谱表明，紫外线暴露伴随有光氧化作用，而在惰性气体气氛中退火可减少与氢有关的振动。在光谱研究的基础上，我们讨论了由紫外线照射和热退火引起的a-SiC：H薄膜的结构变化。 （C）1998 Elsevier Science B.V.保留所有权利。 [参考：11]

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