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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Characterization of hydrogenated amorphous silicon thin films prepared by magnetron sputtering
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Characterization of hydrogenated amorphous silicon thin films prepared by magnetron sputtering

机译：磁控溅射制备氢化非晶硅薄膜的表征

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Magnetron sputtered hydrogenated amorphous silicon (a-Si:H) thin films have been characterized. Hydrogen (H,) with argon (Ar) was introduced into the sputtering chamber to create the plasma. A sudden increase in the deposition rate occurred when the hydrogen was added. The maximum hydrogen content of 16 atomic percent (at.%) was achieved and a bandgap of about 2.07 eV was determined from the spectral investigations of the hydrogenated films. The effect of radio frequency (RF) power on the deposition rate, as well as on the hydrogen content was investigated. To change the hydrogen content in the films, the hydrogen flow rate was varied while keeping the argon flow rate constant. The hydrogen content in the films increased with increasing hydrogen flow rate up to the maximum content of 16 at.% and then decreased for further increases in hydrogen flow. (c) 2005 Elsevier B.V. All rights reserved.
机译：磁控溅射氢化非晶硅（a-Si：H）薄膜已被表征。将氢（H）与氩气（Ar）引入溅射室以产生等离子体。当添加氢时，沉积速率突然增加。从氢化膜的光谱研究中获得最大氢含量为16原子百分比（原子％），并且带隙为约2.07eV。研究了射频（RF）功率对沉积速率以及氢含量的影响。为了改变膜中的氢含量，在保持氩气流量恒定的同时改变氢流量。膜中的氢含量随着氢流量的增加而增加，直至最大含量为16 at。％，然后降低，以进一步增加氢流量。 （c）2005 Elsevier B.V.保留所有权利。

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