Space charge limited conduction in a-(Ge20Se80)(1-x)Sn-x thin films

Singh R; Tripathi SK; Kumar S

首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Space charge limited conduction in a-(Ge20Se80)(1-x)Sn-x thin films

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Space charge limited conduction in a-(Ge20Se80)(1-x)Sn-x thin films

机译：a-（Ge20Se80）（1-x）Sn-x薄膜中的空间电荷受限传导

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The present paper reports the dc conductivity measurements at high electric fields in vacuum evaporated amorphous thin films of (Ge20Se80) Sn-1-x(x) glassy alloys where 0 < x < 1. Current-voltage (I-V) characteristics have been measured at various fixed temperatures. In these samples, at low electric fields, ohmic behavior is observed. However, at high electric fields (E similar to 10(4) V/cm), non-ohmic behavior is observed. An analysis of the experimental data confirms the presence of space charge limited conduction (SCLC) in the glassy materials studied in the present case. From the fitting of the data to the theory of SCLC, the density of defect states (DOS) near Fermi level is calculated. These results show that the effect of incorporation of Sn in the Ge-Se system is quite different at its low and high concentration. This peculiar role of third element Sn as an impurity in the pure binary Ge20Se80 glassy alloy is also discussed. (c) 2006 Elsevier B.V. All rights reserved.

机译：本文报道了在高电场下在（Ge20Se80）Sn-1-x（x）玻璃态合金的真空蒸发非晶薄膜中的直流电导率测量，其中0

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《Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites》 |2006年第31期|共6页
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Singh R; Tripathi SK; Kumar S;
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正文语种 eng
中图分类晶体学;
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conductivity; films and coatings; vapor phase deposition; chalcogenides; ELECTRICAL-PROPERTIES; CHALCOGENIDE GLASSES; HIGH-PRESSURE; SB-SE; GE-SE; BI; SEMICONDUCTORS; RELAXATION; A-SE80TE20; DOPANTS;

机译：电导率;薄膜和涂层;气相沉积;硫属化物;电子产品;硫属化物玻璃;高压;SB-SE;GE-SE;BI;半导体;松弛;A-SE80TE20;掺杂剂;

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1. Space charge limited conduction in a-(Ge20Se80)(1-x)Sn-x thin films [J] . Singh R, Tripathi SK, Kumar S Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites . 2006,第30a31期

机译：a-（Ge20Se80）（1-x）Sn-x薄膜中的空间电荷受限传导
2. Trap-controlled space-charge-limited conduction in amorphous As_xTe_(1-x) thin films with ovonic threshold switching [J] . Kim Taeho, Lee Dayoon, Kim Jaeyeon, Annales de l'I.H.P . 2020,第4期

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Space charge limited conduction in a-(Ge20Se80)(1-x)Sn-x thin films

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