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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Spectroscopic parameters related to non-bridging oxygen hole centers in amorphous-SiO2
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Spectroscopic parameters related to non-bridging oxygen hole centers in amorphous-SiO2

机译：与无定形SiO2中非桥接氧孔中心有关的光谱参数

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摘要

The relationship between the luminescence at 1.9 eV and the absorption bands at 2.0 eV and at 4.8 eV were investigated in a wide variety of synthetic silica samples exposed to different gamma- and beta-ray irradiation doses. We found that the intensities of these optical bands are linearly correlated in agreement with a model in which they are assigned to a single defect. This finding allows the determination of spectroscopic parameters related to the optical transitions efficiencies. In this case the absorption oscillator strength at 4.8 eV is similar to 200 times higher than that at 2.0 eV; while the 1.9 eV luminescence quantum yield under 4.8 eV excitation is lower (by a factor similar to 3) than that under 2.0 eV excitation. These results are consistent with the energetic level scheme proposed in the literature for the non-bridging oxygen hole center. Moreover, they account for the excitation luminescence pathways occurring after UV and visible absorption. (c) 2005 Elsevier B.V. All rights reserved.
机译：在暴露于不同γ和β射线辐照剂量的各种合成二氧化硅样品中，研究了1.9 eV发光与2.0 eV和4.8 eV吸收带之间的关系。我们发现，这些光带的强度与将它们分配给单个缺陷的模型一致，呈线性相关。该发现允许确定与光学跃迁效率有关的光谱参数。在这种情况下，4.8 eV时的吸收振荡器强度比2.0 eV时高200倍;而4.8 eV激发下的1.9 eV发光量子产率要比2.0 eV激发下的低（约3倍）。这些结果与文献中提出的非桥接氧孔中心的能级方案一致。此外，它们解释了在紫外线和可见光吸收之后发生的激发发光途径。 （c）2005 Elsevier B.V.保留所有权利。

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