P- and n-type doping in carbon modifications

Sitch PK.; Kohler T.; Frauenheim T.; Porezag D.; Jungnickel G.

首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >P- and n-type doping in carbon modifications

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P- and n-type doping in carbon modifications

机译：碳修饰中的P型和N型掺杂

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We present a density-functional based tight-binding (DF-TB) study of the possibility of both n- and p-doping of natural and chemical vapor-deposited diamond, and tetrahedrally bonded amorphous carbon, ta-C. We explain in terms of a charge transfer effect involving partially formed pi bonds, and carbon defects why neither N, B nor P dope ta-C and why N remains fourfold-coordinated in this material but fails to dope. This failure is suggestive of a novel fully sp(2)-bonded carbon crystal modification in which both shallow n- and p-doping may be possible. (C) 1998 Elsevier Science B.V. All rights reserved. [References: 15]

机译：我们提出了基于密度泛函的紧密结合（DF-TB）研究天然和化学气相沉积金刚石以及四面键结合的无定形碳ta-C的n和p掺杂的可能性。我们用涉及部分形成的pi键的电荷转移效应和碳缺陷来解释为什么N，B和P都不掺杂ta-C，为什么N在这种材料中保持四重配位但不能掺杂。这种失败表明新的完全sp（2）键合的碳晶体修饰，其中浅n型和p型掺杂都可能。（C）1998 Elsevier Science B.V.保留所有权利。 [参考：15]

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《Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites》 |1998年第1期|共5页
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Sitch PK.; Kohler T.; Frauenheim T.; Porezag D.; Jungnickel G.;
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正文语种 eng
中图分类晶体学;
关键词
P-doping; N-doping; Density-functional tight-binding (df-tb) method; Ta-c; Tetrahedral amorphous-carbon; Diamond; Nitrogen; Boron;

机译：P掺杂;N掺杂;密度泛函紧密结合（df-tb）方法;Ta-c;四面体无定形碳;金刚石;氮;硼;

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1. P- and n-type doping in carbon modifications [J] . Sitch PK., Kohler T., Frauenheim T., Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites . 1998,第Pta1期

机译：碳修饰中的P型和N型掺杂
2. P- and n-type thermoelectric cement composites with CVD grown p- and n-doped carbon nanotubes: Demonstration of a structural thermoelectric generator [J] . Tzounis Lazaros, Liebscher Marco, Fuge Robert, Energy and Buildings . 2019,第May期

机译：具有CVD生长的P型和N掺杂碳纳米管的P型和N型热电水泥复合材料：结构热电发电机的演示
3. Electronic Structure Modification of Ion Implanted Graphene: The Spectroscopic Signatures of p- and n-Type Doping [J] . Kepaptsoglou Demie, Hardcastle Trevor P., Seabourne Che R., ACS nano . 2015,第11期

机译：离子注入石墨烯的电子结构修饰：p型和n型掺杂的光谱学特征
4. P- and n-type Doping in SiC Sublimation Epitaxy Using Highly Doped Substrates [C] . Philip Hens, Mikael Syvaejaervi, Felix Oehlschlaeger, Silicon carbide and related materials 2008 . 2008

机译：使用高掺杂衬底在SiC升华外延中进行P型和n型掺杂
5. INTERFACIAL PHOTOPROCESSES AT P- AND N-TYPE SILICON SEMICONDUCTING ELECTRODES (REDUCTION, SEMICONDUCTOR STABILIZATION, PHOTOELECTROCHEMICAL, CARBON DIOXIDE, DOPING) [D] . TYSAK, THEODORE 1984

机译：P型和N型硅半导体电极上的界面光处理（还原，半导体稳定化，光化学，二氧化碳，掺杂）
6. Synthesis of p- and n-type Gels Doped with Ionic Charge Carriers [O] . E Alveroglu, Y Yilmaz 2010

机译：离子载流子掺杂的p型和n型凝胶的合成
7. Electronic Structure Modification of Ion Implanted Graphene: The Spectroscopic Signatures of p- and n-Type Doping [O] . Kepaptsoglou, D, Hardcastle, TP, Seabourne, CR, 2015

机译：离子注入石墨烯的电子结构修饰：p型和n型掺杂的光谱特征

P- and n-type doping in carbon modifications

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