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CHE and CHISEL characterization procedure for compact Flash cell model

机译:紧凑型Flash电池模型的CHE和CHISEL表征过程

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摘要

The objective of this paper is to present a CHE (Channel Hot Electron) and CHISEL (CHannel Initiated Secondary ELectron) characterization procedure for a compact Flash memory cell model. As a core element of the Flash memory model, a Philips MOS Model (MM11) model has been used coupled with the charge neutrality expression in the structure. This pragmatic model takes into account the different injection mechanism (CHE, CHISEL and Fowler-Nordheim). The characterization procedure developed under ICCAP to extract the full model card including the CHE and CHISEL current parameters are detailed. This model has been successfully implemented in ELDO. (c) 2007 Elsevier B.V. All rights reserved.
机译:本文的目的是提出一种用于紧凑型闪存单元模型的CHE(通道热电子)和CHISEL(通道发起的次级电子)表征方法。作为闪存模型的核心元素,飞利浦MOS模型(MM11)模型已与结构中的电荷中性表达式结合使用。该实用模型考虑了不同的注入机制(CHE,CHISEL和Fowler-Nordheim)。详细介绍了在ICCAP下开发的用于提取包括CHE和CHISEL当前参数在内的完整模型卡的表征程序。该模型已在ELDO中成功实现。 (c)2007 Elsevier B.V.保留所有权利。

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