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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Effect of N-2/CH4 flow ratio on microstructure and composition of hydrogenated carbon nitride films prepared by a dual DC-RF plasma system
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Effect of N-2/CH4 flow ratio on microstructure and composition of hydrogenated carbon nitride films prepared by a dual DC-RF plasma system

机译：N-2 / CH4流量比对双DC-RF等离子体系统制备的氢化氮化碳膜的微观结构和组成的影响

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摘要

Hydrogenated carbon nitride (a-CN:H) films were deposited on n-type (100) silicon substrates making use of direct current radio frequency plasma enhanced chemical vapor deposition (DC-RF-PECVD), using a gas mixture of CH4 and N-2 as the source gas in range of N-2/CH4 flow ratio from 1/3 to 3/1 (sccm). The deposition rate, composition and bonding structure of the a-CN:H films were characterized by means of X-ray photoelectron spectroscopy (XPS) and Fourier-transform infrared spectrometry (FTIR). The mechanical properties of the deposited films were evaluated using nano-indentation test. It was found that the parameter for the DC-RF-PECVD process had significant effects on the growth rate, structure and properties of the deposited films. The deposition rate of the films decreased clearly, while the N/C ratio in the films increased with increasing N-2/CH4 flow ratio. CN radicals were remarkably formed in the deposited films at different N-2/CH4 flow ratio, and their contents are related to the nitrogen concentrations in the deposited films. Moreover, the hardness and Young's modulus of the a-CN:H films sharply increased at first with increasing N2/CH4 flow ratio, then dramatically decreased with further increase of the N-2/CH4 flow ratio, and the a-CN:H film deposited at 1/1 had the maximum hardness and Young's modulus. In addition, the structural transformation from sp(3)-like to sp(2)-like carbon-nitrogen network in the deposited films also was revealed. (c) 2006 Elsevier B.V. All rights reserved.
机译：使用直流射频等离子体增强化学气相沉积（DC-RF-PECVD），使用CH4和N的气体混合物，在n型（100）硅基板上沉积氢化氮化碳（a-CN：H）膜在N-2 / CH4流量比从1/3到3/1（sccm）的范围内，将-2作为源气体。通过X射线光电子能谱（XPS）和傅里叶变换红外光谱（FTIR）表征了a-CN：H薄膜的沉积速率，组成和键合结构。使用纳米压痕测试评估沉积膜的机械性能。发现DC-RF-PECVD工艺的参数对沉积膜的生长速率，结构和性能具有显着影响。薄膜的沉积速率明显降低，而薄膜中的N / C比随N-2 / CH4流量比的增加而增加。在不同的N-2 / CH4流量比下，CN自由基在沉积膜中形成明显，其含量与沉积膜中的氮浓度有关。此外，a-CN：H薄膜的硬度和杨氏模量首先随着N2 / CH4流量比的增加而急剧增加，然后随着N-2 / CH4流量比和a-CN：H的进一步增加而急剧下降。以1/1沉积的薄膜具有最大的硬度和杨氏模量。此外，还揭示了在沉积膜中从sp（3）样到sp（2）样的碳氮网络的结构转变。 （c）2006 Elsevier B.V.保留所有权利。

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