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Porous silicon grains in SiO2 matrix: Ultrafast photoluminescence and optical gain

机译:SiO2基体中的多孔硅晶粒:超快的光致发光和光学增益

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摘要

We search for the presence of stimulated emission in samples of porous silicon embedded in the sot-gel derived SiO2 matrix. By modifying the etching conditions of the porous silicon using hydrogen peroxide, we decrease substantially the nanocrystal size and produce a significant blue shift of the PL emission. Femtosecond variable-stripe length experiments combined with the shifting-excited spot technique demonstrates positive optical gain (modal gain similar to 25 cm(-1)) in the range 550-730 nm. Ultrafast photoluminescence dynamics indicates the origin of the stimulated emission as possibly due to recombination of excitonic states inside silicon nanocrystals. (c) 2006 Elsevier B.V. All rights reserved.
机译:我们寻找嵌入在热凝胶衍生的SiO2基质中的多孔硅样品中激发发射的存在。通过使用过氧化氢修改多孔硅的刻蚀条件,我们大大减小了纳米晶体的尺寸,并产生了PL发射的明显蓝移。飞秒可变条带长度实验与位移激发光斑技术相结合,证明在550-730 nm范围内具有正的光学增益(模态增益类似于25 cm(-1))。超快光致发光动力学表明受激发射的起源,可能是由于硅纳米晶体内部的激子态复合所致。 (c)2006 Elsevier B.V.保留所有权利。

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