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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Annealing effect on photoluminescence properties of Er doped Al2O3-SiO2 sol-gel films
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Annealing effect on photoluminescence properties of Er doped Al2O3-SiO2 sol-gel films

机译：退火对掺Er的Al2O3-SiO2溶胶-凝胶薄膜光致发光性能的影响

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摘要

Annealing effect on photoluminescence intensity of Er doped Al2O3-SiO2 prepared from Er doped boehmite (AlOOH) and GPS (3-glycidoxypropyltrimethoxysilane) hybrid was investigated. The emission intensities peaked at 1.54 mu m, which correspond to the I-4(13/2) -> I-4(15/2) transition of the Er3+ ion, are greatly increased by about 8 times between 900 and 1000 degrees C, than that expected from TGA associated with the elimination of hydroxyl groups which is responsible for the fluorescence quenching. The residual hydroxyl groups for Er doped Al2O3-SiO2 after annealing at high temperature was further analyzed by FT-IR. Finally, fluorescence intensities were compared with the variation of BET surface areas against the annealing temperature. It was found that photoluminescence intensity below 1000 degrees C was more dependent on surface hydroxyl groups re-adsorbed by a high specific surface area rather than internal hydroxyl groups remained in gel film. (c) 2006 Elsevier B.V. All rights reserved.
机译：研究了由掺Er的勃姆石（AlOOH）和GPS（3-环氧丙氧基丙基三甲氧基硅烷）杂化制备的掺Er的Al2O3-SiO2的退火对光致发光强度的影响。在900到1000摄氏度之间，对应于Er3 +离子的I-4（13/2）-> I-4（15/2）跃迁的峰值为1.54μm的发射强度大大提高了约8倍。 ，比TGA预期的与消除羟基相关，后者负责荧光猝灭。通过FT-IR进一步分析了Er掺杂的Al2O3-SiO2在高温退火后的残留羟基。最后，将荧光强度与BET表面积随退火温度的变化进行比较。发现低于1000℃的光致发光强度更多地取决于被高比表面积重新吸附的表面羟基，而不是凝胶膜中残留的内部羟基。 （c）2006 Elsevier B.V.保留所有权利。

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