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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Optical absorption in amorphous InN thin films
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Optical absorption in amorphous InN thin films

机译：非晶InN薄膜中的光吸收

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摘要

Amorphous indium nitride (a-InN) thin films were deposited onto different substrates at temperatures < 325 K using RF magnetron sputtering at a rate 0.3-0.4 angstrom/s. X-ray diffraction patterns reveal that the films grown on the substrates are amorphous. The optical absorption edge, 'bandgap' energy, E-g, of a-InN has beer) determined by spectroscopic ellipsometry over the energy range 0.88-4.1 eV. The absorption coefficient was obtained by the analysis of the measured ellipsometric spectra with the Tauc-Lorentz model. The E, was determined using the modified Tauc and Cody extrapolations. The corresponding Tauc and Cody optical bandgaps were found to be 1.75 and 1.72 eV, respectively. These values are in excellent agreement with the values of the bandgap, energy obtained as fitting parameters in the Tauc-Lorentz model: 1.72 +/- 0.006 eV as well as by using spectrophotometry (1.74 eV) and photoluminescence (1.6 eV). The spectral dependence of the polarized absorptivities was also investigated. We found that there was a higher absorptivity for wavelengths < 725 nm. This wavelength, similar to 725 nm, therefore indicates that the absorption edge for a-InN is about 1.70 eV. Thus, the average value of the measured optical absorption of a-InN film is approximately 1.68 +/- 0.071 eV. (c) 2006 Elsevier B.V. All rights reserved.
机译：使用RF磁控管溅射，以0.3-0.4埃/秒的速度在<325 K的温度下，将非晶氮化铟（a-InN）薄膜沉积到不同的基板上。 X射线衍射图表明，在基底上生长的膜是非晶的。 α-InN的光学吸收边缘（“带隙”能量E-g，有啤酒）是通过光谱椭圆偏光法在0.88-4.1 eV的能量范围内确定的。吸收系数是通过使用Tauc-Lorentz模型分析测得的椭圆光谱获得的。使用修正的Tauc和Cody外推法确定E。相应的Tauc和Cody光学带隙分别为1.75和1.72 eV。这些值与带隙值，Tauc-Lorentz模型中作为拟合参数获得的能量1.72 +/- 0.006 eV以及通过使用分光光度法（1.74 eV）和光致发光（1.6 eV）的值非常一致。还研究了偏振吸收率的光谱依赖性。我们发现，波长小于725 nm的吸收率更高。因此，该波长类似于725 nm，表明a-InN的吸收边约为1.70 eV。因此，测量的a-InN膜的光吸收的平均值约为1.68 +/- 0.071eV。 （c）2006 Elsevier B.V.保留所有权利。

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