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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >DC and AC Hopping transport in metal/amorphous carbon nitride/metal devices
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DC and AC Hopping transport in metal/amorphous carbon nitride/metal devices

机译：金属/非晶氮化碳/金属器件中的直流和交流跳变传输

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Hopping electrical transport has been investigated in amorphous carbon nitride in both DC and AC modes, as a function of temperature T, electric field F and frequency. The strong field enhancement of the current for F > 5 x 10(4) V cm(-1), causing a departure from the Mott law at low field, i.e. the linear dependence of ln(sigma(OHMIC)) vs (T-0/T)(1/4), is also observed in the AC conductance data. Both conduc tance and equivalent parallel capacitance are discussed in the framework of a universal model of AC transport with spatially randomly distributed energy barriers. The inverse characteristic time 1/tau, which also follows Mott's law, is compatible with the filling rate Gamma(F)(E-DL) of empty states at the transport energy, which governs the DC conductivity. (c) 2006 Elsevier B.V. All rights reserved.
机译：已经研究了非晶碳氮化物在直流和交流两种模式下的跳跃电传输，它们是温度T，电场F和频率的函数。 F> 5 x 10（4）V cm（-1）时电流的强场增强，导致在低场时偏离Mott律，即ln（sigma（OHMIC））与（T-在交流电导数据中也观察到0 / T）（1/4）。电导率和等效并联电容都在具有空间随机分布的能垒的交流输电通用模型的框架内进行了讨论。逆特征时间1 / tau也遵循莫特定律，它与空载态在传输能时的填充率Gamma（F）（E-DL）兼容，传输率决定了直流电导率。 （c）2006 Elsevier B.V.保留所有权利。

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