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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Dc and ac measurements on metal/a-Si : H/metal room temperature quantised resistance devices
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Dc and ac measurements on metal/a-Si : H/metal room temperature quantised resistance devices

机译：金属/ a-Si上的直流和交流测量：H /金属室温量化电阻设备

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摘要

Direct-current (dc) and alternating-current (ac) conductivities of room temperature electroformed Cr/p(+)-a-Si:H/V thin film quantised resistance devices have been measured as a function of temperature, applied field and frequency. The quantised resistance does not change over a temperature range. This invariance is in accordance with the theoretical model suggested for high temperature quantised resistance phenomena. The onset of quantised resistance jumps is associated with the formation of an inductive component within the structure indicating a temporary formation of a metallic conduction channel under the effect of an applied electric field. (C) 2000 Elsevier Science B.V. All rights reserved. [References: 4]
机译：已测量了室温电铸Cr / p（+）-a-Si：H / V薄膜量化电阻器件的直流（dc）和交流（ac）电导率随温度，施加场和频率的变化。量化电阻在温度范围内不变。该不变性符合针对高温量化电阻现象建议的理论模型。量化电阻跃变的开始与结构内电感成分的形成有关，表明在施加电场的作用下金属导电通道的临时形成。 （C）2000 Elsevier Science B.V.保留所有权利。 [参考：4]

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