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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Optimization of n-i-p protocrystalline SiGe : H thin film solar cells for application in thin film multijunction solar cells
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Optimization of n-i-p protocrystalline SiGe : H thin film solar cells for application in thin film multijunction solar cells

机译：n-i-p原晶SiGe：H薄膜太阳能电池的优化，用于薄膜多结太阳能电池

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In developing n-i-p structured narrow band gap protocrystalline SiGe:H thin film solar cells, an S-shape was encountered in the cells' current-voltage characteristics, which was not present in the curves of p-i-n cells that incorporated the same i-layer material. With the help of a carefully designed series of annealing experiments, the S-shape was found to consist of two barriers, one of which is located at the p/i interface while the other one is at the ITO/p front contact. Further investigations using thin layer Raman spectroscopy and activation energy measurements pointed out that the barriers are mainly due to a drifting of the mu c-Si p-layer deposition from optimized conditions. By optimizing the p-layer deposition and with the use of post-deposition annealing of the entire cell structure, an efficiency of 8.7% was achieved for a 1.55 eV band gap protocrystalline SiGe:H n-i-p cell on an Asahi U-type substrate coated with a Ag/ZnO back reflector. (c) 2006 Elsevier B.V. All rights reserved.
机译：在开发n-i-p结构的窄带隙原晶SiGe：H薄膜太阳能电池时，在电池的电流-电压特性中遇到了S形，而在并入相同i层材料的p-i-n电池的曲线中则没有这种形状。在一系列精心设计的退火实验的帮助下，S形由两个势垒组成，其中一个位于p / i界面，另一个位于ITO / p前触点。使用薄层拉曼光谱和活化能测量的进一步研究指出，势垒主要是由于优化条件下mu c-Si p层沉积的漂移。通过优化p层沉积并使用整个电池结构的沉积后退火技术，在涂有Asahi U型衬底的1.55 eV带隙原晶SiGe：H nip电池上，其效率达到了8.7％。 Ag / ZnO背面反射器。 （c）2006 Elsevier B.V.保留所有权利。

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