【24h】

Tunneling injection temperature dependence in EEPROM cell

机译:EEPROM单元中隧道注入温度的依赖性

获取原文
获取原文并翻译 | 示例
           

摘要

In this paper we propose a new model of the EEPROM tunnel capacitance that takes into account temperature dependence. For this purpose, non-quasi-static C(V) measurements are made in order to extract the tunnel capacity physical parameters. Temperature dependence of the interface state density occupation was evaluated. Simulation of surface potential with temperature variation was implemented. We propose a complete electrical simulation of tunnel capacitance with temperature dependence. Finally, temperature EEPROM cell working simulations are presented. (c) 2007 Elsevier B.V. All rights reserved.
机译:在本文中,我们提出了一种考虑温度依赖性的EEPROM隧道电容的新模型。为此,进行非准静态C(V)测量以提取隧道容量物理参数。评估了界面态密度职业的温度依赖性。进行了表面电位随温度变化的模拟。我们提出了具有温度依赖性的隧道电容的完整电模拟。最后,介绍了温度EEPROM单元的工作仿真。 (c)2007 Elsevier B.V.保留所有权利。

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号