...
【24h】

Preparation of indium tin oxide thin films without external heating for application in solar cells

机译:无需外部加热即可制备用于太阳能电池的铟锡氧化物薄膜

获取原文
获取原文并翻译 | 示例
           

摘要

Indium tin oxide (ITO) films were grown without external heating in an ambient of pure argon by RF-magnetron sputtering method. The influence of argon ambient pressure on the electro-optical properties of as-deposited ITO films was investigated. The morphology. structural and optical properties of ITO films were examined and characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM) and UV-VIS transmission spectroscopy. The deposited ITO films with a thickness of 300 nm show a high transparency between 80% and 90% in the visible spectrum and 14-120 Omega/square sheet resistance under different conditions, The ITO films deposited in the optimum argon ambient pressure were used as transparent electrical contacts for thin film Cu(In,Ga)Se-2 (CIGS) solar cells. CIGS solar cells with efficiencies of the order of 7.0% were produced without antireflective films. The results have demonstrated that the developed ITO deposition technology has potential applications in thin film solar cells.
机译:通过RF-磁控溅射法,在纯氩气的环境下在没有外部加热的情况下生长铟锡氧化物(ITO)膜。研究了氩气环境压力对沉积的ITO薄膜电光性能的影响。形态。通过X射线衍射(XRD),场发射扫描电子显微镜(FESEM),原子力显微镜(AFM)和UV-VIS透射光谱对ITO膜的结构和光学性质进行了检查和表征。沉积的厚度为300 nm的ITO膜在不同条件下在可见光谱中具有80%到90%的高透明度,在不同条件下显示14-120Ω/平方薄层电阻。薄膜Cu(In,Ga)Se-2(CIGS)太阳能电池的透明电触点。在没有抗反射膜的情况下生产了效率为7.0%左右的CIGS太阳能电池。结果表明,开发的ITO沉积技术在薄膜太阳能电池中具有潜在的应用。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号