Strong influence of boron doping on nanocrystalline silicon-carbide formation by using photo-CVD technique

Myong SY; Shevaleevskiy O; Lim KS; Miyajima S; Konagai M

首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Strong influence of boron doping on nanocrystalline silicon-carbide formation by using photo-CVD technique

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Strong influence of boron doping on nanocrystalline silicon-carbide formation by using photo-CVD technique

机译：光CVD技术对硼掺杂对纳米晶碳化硅形成的强烈影响

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We select the boron as a dopant of wide bandgap nanocrystalline silicon-carbide (nc-SiC:H) film in order to achieve a high conductivity. Boron atoms introduced at the growing surface play important roles on the structural. electrical and optical characteristic,, of this material. It is found that they hinder the nucleation of nanocrystallites by elevating the deposition speed. Therefore. a relevant light doping is essential to improve the electrical conductivity without deteriorating, significantly the crystallinity and optical bandgap. (C) 2004 Elsevier B.V. All rights reserved.

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《Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites》 |2005年第1期|共4页
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Myong SY; Shevaleevskiy O; Lim KS; Miyajima S; Konagai M;
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正文语种 eng
中图分类晶体学;
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PHOTOCHEMICAL VAPOR-DEPOSITION; MICROCRYSTALLINE SILICON; ELECTRICAL-PROPERTIES; OPTICAL-PROPERTIES; HYDROGEN-DILUTION; GLOW-DISCHARGE; CARBON SOURCE; FILMS; IMPROVEMENT; ETHYLENE;

机译：光化学气相沉积;微晶硅;电子特性;光学特性;氢稀释;辉光放电;碳源;薄膜;改进;乙烯;

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1. Strong influence of boron doping on nanocrystalline silicon-carbide formation by using photo-CVD technique [J] . Myong SY, Shevaleevskiy O, Lim KS, Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites . 2005,第1期

机译：光CVD技术对硼掺杂对纳米晶碳化硅形成的强烈影响
2. Highly conductive boron-doped nanocrystalline silicon-carbide film prepared by low-hydrogen-dilution photo-CVD method using ethylene as a carbon source [J] . Myong SY., Lee HK., Yoon E., Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites . 2002,第2a3期

机译：以乙烯为碳源，通过低氢稀释光CVD法制备的高导电掺硼纳米晶碳化硅膜
3. Low-temperature preparation of boron-doped nanocrystalline SiC : H films using mercury-sensitized photo-CVD technique [J] . Myong SY, Kim TH, Lim KS, Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion . 2004,第4期

机译：汞敏光CVD技术低温制备掺硼纳米SiC：H薄膜
4. Influence of the Doping Level at Boron Doped Nanocrystalline Diamond Films in the Electrochemical Determination of Nitrite [C] . Jorge T. Matsushima, Diego H.L. Souza, Fernando A. Souza, Symposium on diamond electronics and biotechnology-fundamentals to applications V . 2012

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Strong influence of boron doping on nanocrystalline silicon-carbide formation by using photo-CVD technique

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