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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Network topological thresholds in gallium doped As–Te glasses – Electrical and thermal investigations
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Network topological thresholds in gallium doped As–Te glasses – Electrical and thermal investigations

机译：镓掺杂As-Te玻璃的网络拓扑阈值–电气和热学研究

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摘要

Electrical switching and differential scanning calorimetric studies are undertaken on bulk As20Te80-xGax glasses, to elucidate the network topological thresholds. It is found that these glasses exhibit a single glass transition (Tg) and two crystallization reactions (Tc1 & Tc2) upon heating. It is also found that there is only a marginal change in Tg with the addition of up to about 10% of Ga; around this composition an increase is seen in Tg which culminates in a local maximum around x = 15. The decrease exhibited in Tg beyond this composition, leads to a local minimum at x = 17.5. Further, the As20Te80-xGax glasses are found to exhibit memory type electrical switching. The switching voltages (VT) increase with the increase in gallium content and a local maximum is seen in VT around x = 15. VT is found to decrease with x thereafter, exhibiting a local minimum around x = 17.5. The composition dependence of Tc1 is found to be very similar to that of VT of As20Te80-xGax glasses. Based on the present results, it is proposed that the composition x = 15 and x = 17.5 correspond to the rigidity percolation and chemical thresholds, respectively, of As20Te80-xGax glasses.
机译：在大块的As20Te80-xGax眼镜上进行电开关和差示扫描量热研究，以阐明网络拓扑阈值。发现这些玻璃在加热时表现出单个玻璃化转变（Tg）和两个结晶反应（Tc1和Tc2）。还发现添加大约10％的Ga时，Tg仅有少量变化。在此组成附近，Tg有所增加，最终在x = 15附近达到局部最大值。在该组成之外，Tg所表现出的减小导致x = 17.5处的局部最小值。此外，发现As20Te80-xGax眼镜具有记忆型电开关功能。开关电压（VT）随着镓含量的增加而增加，并且在VT处x = 15处出现局部最大值。此后发现VT随x减小，在x = 17.5附近表现出局部最小值。发现Tc1的成分依赖性与As20Te80-xGax玻璃的VT非常相似。根据目前的结果，建议组成x = 15和x = 17.5分别对应于As20Te80-xGax玻璃的刚度渗透和化学阈值。

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