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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Fluorinated nanoporous SiO2 films with ultra-low dielectric constant
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Fluorinated nanoporous SiO2 films with ultra-low dielectric constant

机译：介电常数超低的氟化纳米多孔SiO2膜

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Fluorinated nanoporous silica (denoted as SiO2:F) thin films with low dielectric constant were prepared by a sol-gel method and spin coating technique. The leakage current densities of the SiO2:F thin films were 10(-8) and 3 x 10(-6) A/cm(2) respectively for the as-deposited films and for those subjected to annealing at a temperature of 450 degrees C. These currents are more than one order of magnitude lower than those of the common SiO2 films. Photoluminescent results showed strong blue-light emission and a small blue shift in the SiO2:F films that were related to the increment of the porosity. The dielectric properties were also characterized and the k value of the annealed SiO2:F film was found to be about 1.67. The hole size in the films is small and the size distribution is uniform for the annealed SiO2:F samples due to the effects of fluorination. The underlying mechanism for fluorination is discussed in this paper. (c) 2008 Elsevier B.V. All rights reserved.
机译：通过溶胶-凝胶法和旋涂技术制备了介电常数低的氟化纳米多孔二氧化硅（表示为SiO2：F）薄膜。沉积后的膜和在450度温度下退火的膜的SiO2：F薄膜的漏电流密度分别为10（-8）和3 x 10（-6）A / cm（2）这些电流比普通的SiO2膜低一个数量级以上。光致发光结果表明，SiO2：F薄膜具有较强的蓝光发射和较小的蓝移，这与孔隙率的增加有关。还表征了介电性能，并且发现退火的SiO 2：F膜的k值约为1.67。由于氟化作用，退火后的SiO2：F样品中的孔尺寸小且尺寸分布均匀。本文讨论了氟化的潜在机理。 （c）2008 Elsevier B.V.保留所有权利。

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