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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Reverse bias capacitance-voltage characteristics of Al/polyaniline/p-Si/Al structure as a function of temperature
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Reverse bias capacitance-voltage characteristics of Al/polyaniline/p-Si/Al structure as a function of temperature

机译：Al /聚苯胺/ p-Si / Al结构的反向偏置电容-电压特性随温度的变化

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摘要

The polyaniline/p-Si Structure has been made by the electrochemical polymerization of the organic polyaniline onto the p-Si substrate. The reverse bias capacitance-voltage (C-V) characteristics of the structure have been determined at different temperatures. The 1/C-2-V plots of the structure are non-linear and the Values of the diffusion potentials are exceeding the band gap value and these characteristics have been attributed to the presence of the excess capacitance due to the space charge and interface states in the depletion layer. Non-linear 1/C-2-V plots showing Curvature concave downwards have been transformed into linear 1/(C-C-0)(2) vs. V plots by determining the excess capacitance, C-0. Then. some junction parameters, such as the barrier height, have been calculated.
机译：聚苯胺/ p-Si结构是通过有机聚苯胺在p-Si衬底上的电化学聚合反应制得的。已经在不同温度下确定了该结构的反向偏置电容-电压（C-V）特性。结构的1 / C-2-V图是非线性的，扩散电势的值超过了带隙值，并且这些特性归因于由于空间电荷和界面态而存在的多余电容在耗尽层。通过确定多余电容C-0，显示向下弯曲的曲线的非线性1 / C-2-V图已转换为线性1 /（C-C-0）（2）vs. V图。然后。已经计算了一些结参数，例如势垒高度。

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