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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Properties of nitrogen doped tetrahedral amorphous carbon films prepared by filtered cathodic vacuum are technique
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Properties of nitrogen doped tetrahedral amorphous carbon films prepared by filtered cathodic vacuum are technique

机译：过滤阴极真空制备氮掺杂四面体非晶碳膜的性能研究。

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The properties of nitrogen doped tetrahedral amorphous carbon films prepared by the filtered cathodic vacuum are technique have been studied. The doping species, nitrogen ions, were produced by an ion beam source. The nitrogen flow rate was varied from 0.5 to 10 seem while keeping other deposition conditions constant. The nitrogen content in deposited films was determined by Rutherford backscattering technique and ranged from 5 to 34 at.% depending on the nitrogen flow rate. The surface morphology, mechanical, optical, and electronic properties of the films were measured. The compressive stress, the hardness and the optical band gap all increased at low nitrogen content to a maximum at 5 at.% nitrogen and then decreased with increasing nitrogen content. The activation energy first increased and then decreased with increasing nitrogen content. We attribute these changes to the Fermi level moving up in the band gap, from below the midgap to near conduction band. We achieved continuously adjustable band gap and complex refractive index with nitrogen incorporation. Possible mechanisms of N ion in the ta-C:N films are discussed. (C) 1998 Elsevier Science B.V. All rights reserved. [References: 20]
机译：研究了通过过滤阴极真空制备的氮掺杂四面体非晶碳膜的性能。氮离子是由离子束源产生的。在保持其他沉积条件不变的同时，氮气流速在0.5至10sccm之间变化。沉积膜中的氮含量通过卢瑟福反向散射技术确定，其范围为5至34 at。％，具体取决于氮的流速。测量了膜的表面形态，机械，光学和电子性质。在低氮含量下，压缩应力，硬度和光学带隙都增加，在氮含量为5 at。％时达到最大值，然后随着氮含量的增加而降低。随着氮含量的增加，活化能先增加然后减少。我们将这些变化归因于费米能级在带隙中向上移动，从中带以下到接近导带。通过引入氮，我们获得了连续可调的带隙和复杂的折射率。讨论了ta-C：N膜中N离子的可能机理。 （C）1998 Elsevier Science B.V.保留所有权利。 [参考：20]

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