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Electric field and temperature dependence of the stress induced leakage current: Fowler-Nordheim or Schottky emission?

机译:电场和温度对应力感应泄漏电流的依赖性:福勒-诺德海姆还是肖特基发射?

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摘要

The mechanism for the stress induced leakage current remains controversial. The aim of this work is to study the temperature dependence of the stress induced leakage current of 5.5 and 4 nm thick SiO_2 oxides. From these temperature measurements an activation energy is extracted. By simulating the temperature dependence of the stress induced leakage current it is demonstrated that only a Schottky-like thermionic emission law can fit simultaneously the dependence of the gate current and of the activation energy with gate voltage.
机译:应力引起的泄漏电流的机制仍存在争议。这项工作的目的是研究应力诱发的5.5和4 nm厚SiO_2氧化物泄漏电流的温度依赖性。从这些温度测量值中提取出活化能。通过模拟应力引起的漏电流的温度依赖性,证明只有肖特基样的热电子发射定律可以同时拟合栅极电流和活化能与栅极电压的依赖性。

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