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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Transport mechanism of deposition precursors in catalytic chemical vapor deposition studied using a reactor tube
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Transport mechanism of deposition precursors in catalytic chemical vapor deposition studied using a reactor tube

机译：使用反应器管研究催化化学气相沉积中沉积前体的传输机理

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Transport mechanism of deposition precursors in catalytic chemical vapor deposition (CVD) often called hot-wire CVD, was investigated to identify the precursor species and make the conditions for uniform-film preparation known. Precursor-transport mechanism was analysed from the film-thickness profiles of amorphous silicon in the reactor tube as a function of the distance from the catalyzer. It was found that precursors are mainly transported by thermal diffusion. However, the affect of the gas flow on precursor transport was effective at a pressure of a few tens Pa and gas-flow velocity faster than several m/s. Decomposition probability of one SiH4 molecule by one collision with the catalyzer is estimated to be about 40%. Efficiency of gas use for SiH4 was several tens % because of high decomposition probability of SiH4. (C) 2000 Elsevier Science B.V. All rights reserved. [References: 4]
机译：研究了通常被称为热线CVD的催化化学气相沉积（CVD）中沉积前体的传输机制，以识别前体种类并告知均匀膜制备的条件。根据反应器管中非晶硅的膜厚分布图，分析了前驱体的传输机理，该膜厚度是距催化剂的距离的函数。发现前体主要通过热扩散来运输。但是，气流对前驱体的影响在几十Pa的压力下有效，气流速度快于几m / s。一个SiH4分子与催化剂发生一次碰撞的分解概率估计约为40％。由于SiH4分解的可能性很高，因此用于SiH4的气体利用效率为几十％。 （C）2000 Elsevier Science B.V.保留所有权利。 [参考：4]

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