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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >On angle resolved RF magnetron sputtering of Ge-Sb-Te thin films
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On angle resolved RF magnetron sputtering of Ge-Sb-Te thin films

机译：Ge-Sb-Te薄膜的角分辨射频磁控溅射

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摘要

Thin amorphous films of Ge-Sb-Te were deposited from Ge2Sb2Te5 target by RF (f=13.56 MHz) magnetron sputtering in argon plasma. Composition and chemical homogeneity of target and prepared thin films were traced by Energy Dispersive X-ray Analysis coupled with Scanning Electron Microscope (SEM-EDX). SEM technique was also used for surface morphology observation. Crystallinity of target and prepared thin films was studied by X-ray Diffraction (XRD). Optical parameters of prepared thin films (spectral dependence of refractive index, optical band gap energy E-g(opt)) and film thicknesses were established via Variable Angle Spectroscopic Ellipsometry (VASE) supported by UV-Vis-NIR spectroscopy. Influence of deposition conditions (RF power, At pressure, angle divergency from normal direction) to composition, crystallinity, optical properties and deposition rate was established.
机译：在氩气等离子体中，通过RF（f = 13.56 MHz）磁控溅射从Ge2Sb2Te5靶上沉积了非晶态的Ge-Sb-Te薄膜。通过能量色散X射线分析和扫描电子显微镜（SEM-EDX）追踪目标和制备薄膜的组成和化学均匀性。 SEM技术也用于表面形态观察。通过X射线衍射（XRD）研究了目标薄膜和制备的薄膜的结晶度。制备的薄膜的光学参数（折射率，光学带隙能量E-g（opt）的光谱依赖性）和膜厚是通过UV-Vis-NIR光谱仪支持的可变角光谱椭圆仪（VASE）建立的。确定了沉积条件（RF功率，在压力下，法线方向的角度发散度）对组成，结晶度，光学性质和沉积速率的影响。

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