Investigation of capacitance-voltage characteristics in Ge/high-kappa MOS devices

Moreau M; Munteanu D; Autran JL; Bellenger F; Mitard J; Houssa M

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Investigation of capacitance-voltage characteristics in Ge/high-kappa MOS devices

机译：Ge /高κMOS器件的电容电压特性研究

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We developed a one-dimensional numerical simulation code for the calculation of the gate voltage-capacitance characteristic of MOS structures including the self-consistently solving of the Schrodinger and Poisson equations for different alternative channel materials with high mobility such as Ge, and non-conventional gate dielectrics such as HfO2 and Al2O3. Our simulation results are confronted to experimental data for various MOS structures with different semiconductors and dielectric stacks.

机译：我们开发了一维数值模拟代码来计算MOS结构的栅极电压-电容特性，包括对高迁移率的不同替代沟道材料（如Ge和非常规材料）的Schrodinger和Poisson方程进行自洽求解。栅极电介质，例如HfO2和Al2O3。我们的仿真结果与具有不同半导体和介电叠层的各种MOS结构的实验数据相对应。

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《Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites》 |2009年第21期|共5页
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Moreau M; Munteanu D; Autran JL; Bellenger F; Mitard J; Houssa M;
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正文语种 eng
中图分类非晶态和类晶态;
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Devices; Electrical and electronic properties; Modeling and simulation;

机译：器件;电气和电子特性;建模与仿真;

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1. Investigation of capacitance-voltage characteristics in Ge/high-kappa MOS devices [J] . Moreau M, Munteanu D, Autran JL, Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites . 2009,第18a21期

机译：Ge /高κMOS器件的电容电压特性研究
2. Investigation of current-voltage and capacitance-voltage characteristics of Ag/perylene-monoimide-GaAs Schottky diode [J] . ?im?ir N., ?afak H., Yüksel ?.F., Current applied physics: the official journal of the Korean Physical Society . 2012,第6期

机译：Ag / per一酰亚胺/ n-GaAs肖特基二极管的电流-电压和电容-电压特性研究
3. Advances in Hemodynamic Analysis in Cardiovascular Diseases Investigation of Energetic Characteristics of Adult and Pediatric Sputnik Left Ventricular Assist Devices during Mock Circulation Support [J] . Alexander A. Pugovkin, Aleksandr G. Markov, Sergey V. Selishchev, Cardiology research and practice . 2019,第1期

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4. Analysis of MOS device capacitance-voltage characteristics based on the self-consikstent solution of the schrodinger and poisson equations [C] . C.Raynaud, J.L.Autran, P.masson, Symposium on Structure and Electronic Properties of Ultrathin Dielectric Films on Silicon and Related Structures held November 29-December 1, 1999, Boston, Massachusetts, U.S.A. . 1999

机译：基于薛定inger方程和泊松方程的自洽解的MOS器件电容-电压特性分析
5. Development of an innovative fabrication method for n-MOS to p-MOS tunable single metal gate/high-kappa insulator devices for multiple threshold voltage applications. [D] . Burham, Cynthia Faye. 2009

机译：开发了用于多阈值电压应用的n-MOS到p-MOS可调谐单金属栅极/高kappa绝缘体器件的创新制造方法。
6. Advances in Hemodynamic Analysis in Cardiovascular Diseases Investigation of Energetic Characteristics of Adult and Pediatric Sputnik Left Ventricular Assist Devices during Mock Circulation Support [O] . Alexander A. Pugovkin, Aleksandr G. Markov, Sergey V. Selishchev, 2019

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7. Analysis of Interface Charge Using Capacitance-Voltage Method for Ultra Thin HfO2 Gate Dielectric Based MOS Devices [O] . Maity N.P., Thakur R.R., Maity Reshmi, 2015

机译：基于电容电压方法的超薄HfO2栅介电MOS器件的界面电荷分析
8. Quasi-Static Capacitance-Voltage Characteristics of MNOS Devices. [R] . trever,george w. 1974

机译：mNOs器件的准静态电容 - 电压特性。

Investigation of capacitance-voltage characteristics in Ge/high-kappa MOS devices

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