...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Effect of thermal annealing on the Ir/Ag contact to p-type GaN
【24h】

Effect of thermal annealing on the Ir/Ag contact to p-type GaN

机译：热退火对Ir / Ag与p型GaN接触的影响

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

In the present work, ohmic contacts of iridium(Ir)/silver(Ag) bi-layer contacts on p-type GaN have been fabricated. A metal Ag thin layer was selected as the capping layer due to its surface plasmon coupling and reflective characteristics at visible light emissions. The ohmic contacts were annealed at various temperatures to ascertain their thermal stability. The structural and electrical characteristics of the Ir/Ag contacts at 400 °C-700 °C were investigated, as thermally stable metal-semiconductor junction contacts are essential for high quality ohmic contact devices. The changes in the top surface morphology of the contacts on annealing were observed using scanning electron microscopy (SEM). Ohmic behavior and specific contact resistivity were determined using transmission line method (TLM). Current-voltage (I-V) measurements were carried out to verify the ohmic nature of the annealed contacts. All the as-deposited Ir/Ag contacts revealed non-linear I-V behaviors. However, the contacts become ohmic as a function of anneal temperature. The annealing induced improvement of the I-V behaviors of the Ir/Ag contacts could be related to the minimization of agglomeration of intermetallics and formation of intra-agglomerate voids. The Ir/Ag interlayer effectively prevents the void formation at the Ag-GaN interfaces. The remarkable contact resistance is attributed to the reduction of the oxide by Ir diffusion along with the formation of metal gallide phases at the p-type GaN surface region. The improved ohmic behaviors could be because of the inhomogeneous barrier formation at the contact scheme interface properties related to the breaking up of the IrO _2 thin layer. The electronic transport theory at the Ir/Ag and semiconductor interface with inhomogeneous Schottky barriers shows that the existence of the IrO_2 and IrO_2/GaN could lead to higher built in electric field at contact schemes of GaN interface.
机译：在当前的工作中，已经制造了p型GaN上的铱（Ir）/银（Ag）双层接触的欧姆接触。选择金属Ag薄层作为覆盖层，因为它的表面等离激元耦合和可见光发射时的反射特性。欧姆接触在各种温度下退火以确定其热稳定性。研究了Ir / Ag触点在400°C-700°C时的结构和电气特性，因为热稳定的金属-半导体结触点对于高质量欧姆接触器件至关重要。使用扫描电子显微镜（SEM）观察了退火时触点顶部表面形态的变化。欧姆行为和比接触电阻率是使用传输线方法（TLM）确定的。进行电流-电压（I-V）测量以验证退火触点的欧姆特性。所有沉积的Ir / Ag接触都显示出非线性的I-V行为。但是，根据退火温度，触点变为欧姆性。退火引起的Ir / Ag接触的I-V行为的改善可能与金属间化合物的团聚最小化和团聚内部空隙的形成有关。 Ir / Ag中间层有效地防止了在Ag-GaN界面处形成空隙。出色的接触电阻归因于Ir扩散引起的氧化物还原以及在p型GaN表面区域形成金属镓化物相。改善的欧姆行为可能是由于与IrO _2薄层破裂有关的接触方案界面性质不均匀的势垒形成。 Ir / Ag与具有不均匀肖特基势垒的半导体界面处的电子输运理论表明，IrO_2和IrO_2 / GaN的存在可能导致GaN界面接触方案中的内置电场更高。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号