Preparation of thick GeO_2 glass film with high UV photosensitivity

Jing C.; Shan H.; Zhang C.; Chu J.

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Preparation of thick GeO_2 glass film with high UV photosensitivity

机译：高紫外光敏性GeO_2玻璃厚膜的制备

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Hexagonal GeO_2 ceramic films were fabricated at room temperature via an acid induced liquid phase deposition (LPD) method. Thick GeO_2 glass films were prepared using a melting and quick cooling technique. The glass films were annealed in a mixed hydrogenitrogen gas atmosphere to create more oxygen vacancies. The intensity of 5-eV absorption band enhances with increase of annealing temperature as well as time. The activation energy of oxygen vacancy formation is calculated to be 0.91 ± 0.05 eV. The 5-eV absorption band is photobleachable, and the saturated absorptivity change reaches 575 ± 17 cm~(- 1).

机译：通过酸诱导液相沉积（LPD）方法在室温下制备六角形GeO_2陶瓷膜。使用熔融和快速冷却技术制备了厚的GeO_2玻璃膜。玻璃膜在氢气/氮气混合气氛中退火，以产生更多的氧空位。 5-eV吸收带的强度随着退火温度和时间的增加而增强。氧空位形成的活化能经计算为0.91±0.05 eV。 5-eV吸收带是可光漂白的，饱和吸收率变化达到575±17 cm〜（-1）。

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《Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites》 |2010年第51期|共5页
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Jing C.; Shan H.; Zhang C.; Chu J.;
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正文语种 eng
中图分类非晶态和类晶态;
关键词
5-eV absorption band; Activation energy; Thick GeO_2; UV photosensitivity;

机译：5-eV吸收带活化能厚GeO_2紫外光敏;

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1. Preparation of thick GeO_2 glass film with high UV photosensitivity [J] . Jing C., Shan H., Zhang C., Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites . 2010,第50a51期

机译：高紫外光敏性GeO_2玻璃厚膜的制备
2. Direct UV patterning of thick hybrid glass films for micro-opto-mechanical structures [J] . Rantala J.T., Levy R. Electronics Letters . 2000,第6期

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3. Effect of boron concentration on the UV photosensitivity of silica glass film for planar lightwave circuit [J] . Dongwook Shin Applied Surface Science . 2007,第19期

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4. Preparation And Characterization Of CsI:Tl Thick Films On Silica Glass Substrate [C] . Seema Shinde, S. Singh, S. Sen, DAE Solid State Physics Symposium . 2014

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7. Preparation and characterization of a semiconducting oxide glass thick film by quick queching [O] . Biswal S 2014

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Preparation of thick GeO_2 glass film with high UV photosensitivity

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