...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Optimized surface passivation of n and p type silicon wafers using hydrogenated SiN_x layers
【24h】

Optimized surface passivation of n and p type silicon wafers using hydrogenated SiN_x layers

机译：使用氢化SiN_x层优化n和p型硅晶片的表面钝化

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

We have investigated surface passivation of n and p type silicon wafers, obtained by controlling silicon-hydrogen bonding and fixed charge densities with the use of hydrogenated SiN_x films. The hydrogenated SiN_x films were deposited by single PECVD at 13.56 MHz with SiH_4/NH _3 gas mixture. The hydrogenated SiN_x films of refractive indices 2.55-1.92 and high optical band-gap (> 3.1 eV) were obtained by varying the hydrogenated SiN_x film composition. The fixed charge densities, hydrogen-bonding and carrier lifetime performance in n and p type silicon wafer were analyzed. The highest fixed positive charge of 2.66 × 10~(12) (cm~(- 2)) was for the hydrogenated SiN_x film composition of 1.21. Fourier transform infrared spectroscopy measurement was carried out to evaluate the bonding concentration of Si-H and N-H. The minority carrier lifetimes of the hydrogenated SiN_x passivated silicon wafers were up to 153 μs and 84 μs for p and n type, respectively. Mechanism of surface passivation depends on the type of silicon wafer. The higher Si-H bond density is the key point of n type passivation quality. The large fixed positive charge is used to measure p type passivation quality.
机译：我们研究了n型和p型硅晶片的表面钝化，该钝化是通过使用氢化SiN_x膜控制硅氢键和固定电荷密度而获得的。通过单PECVD在13.56MHz下用SiH_4 / NH_3气体混合物沉积氢化的SiN_x膜。通过改变氢化的SiN_x膜组成，获得折射率为2.55-1.92和高光学带隙（＞ 3.1eV）的氢化的SiN_x膜。分析了n型和p型硅片的固定电荷密度，氢键和载流子寿命性能。对于氢化的SiN_x膜组成为1.21，最高的固定正电荷为2.66×10〜（12）（cm〜（-2））。进行傅立叶变换红外光谱测量以评估Si-H和N-H的键合浓度。对于p型和n型，氢化的SiN_x钝化硅晶片的少数载流子寿命分别高达153μs和84μs。表面钝化的机理取决于硅晶片的类型。较高的Si-H键密度是n型钝化质量的关键。大的固定正电荷用于测量p型钝化质量。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号