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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Temperature dependent negative capacitance behavior in (Ni/Au)/AlGaN/AlN/GaN heterostructures
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Temperature dependent negative capacitance behavior in (Ni/Au)/AlGaN/AlN/GaN heterostructures

机译：（Ni / Au）/ AlGaN / AlN / GaN异质结构中与温度有关的负电容行为

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摘要

The temperature dependent capacitance voltage (C-V) and conductance voltage (G/omega-V) characteristics of (Ni/Au)/Al0.22Ga0.78N/AlN/GaN heterostructures were investigated by considering the series resistance (R-s) effect in the temperature range of 80-390 K. The experimental results show that the values of C and G/omega are strongly functioning of temperature and bias voltage. The values of C cross at a certain forward bias voltage point (similar to 2.8 V) and then change to negative values for each temperature, which is known as negative capacitance (NC) behavior. In order to explain the NC behavior, we drawn the C vs I and G/omega vs I plots for various temperatures at the same bias voltage. The negativity of the C decreases with increasing temperature at the forward bias voltage, and this decrement in the NC corresponds to the increment of the conductance. When the temperature was increased, the value of C decreased and the intersection point shifted towards the zero bias direction. This behavior of the C and G/omega values can be attributed to an increase in the polarization and the introduction of more carriers in the structure. R-s values increase with increasing temperature. Such temperature dependence is in obvious disagreement with the negative temperature coefficient of R or G reported in the literature. The intersection behavior of C-V curves and the increase in R-s with temperature can be explained by the lack of free charge carriers, especially at low temperatures.
机译：考虑了温度下的串联电阻（Rs）效应，研究了（Ni / Au）/Al0.22Ga0.78N/AlN/GaN异质结构的温度相关电容电压（CV）和电导电压（G / omega-V）特性温度范围为80-390K。实验结果表明，C和G / o值与温度和偏置电压密切相关。 C的值在某个正向偏置电压点（类似于2.8 V）处交叉，然后针对每个温度变为负值，这被称为负电容（NC）行为。为了解释NC行为，我们绘制了在相同偏置电压下各种温度的C对I和G / omega对I图。 C的负极性随着正向偏置电压下温度的升高而降低，而NC中的这种降低对应于电导的增加。当温度升高时，C值降低，交点向零偏压方向移动。 C和G /ω值的这种行为可归因于极化的增加和结构中更多载流子的引入。 R-s值随温度升高而增加。这种温度依赖性明显不同于文献中报道的R或G的负温度系数。 C-V曲线的相交行为和R-s随温度的增加可以用缺乏自由电荷载流子来解释，尤其是在低温下。

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