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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Selective synthesis of SiO_2 NWs on Si substrate and their adjustable photoluminescence
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Selective synthesis of SiO_2 NWs on Si substrate and their adjustable photoluminescence

机译：Si衬底上SiO_2 NW的选择性合成及其可调节的光致发光

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摘要

Amorphous SiO_2 nanowires with diameters of 20-200 nm and lengths of several micrometers were selectively grown at 1100 °C under ambient pressure on the ultra-thin Au film coated silicon wafers which were characterized by scanning electron microscope, Fourier transform infrared spectroscope, and high resolution transmission electron microscope. Using X-ray energy dispersion spectroscope equipped on the high resolution transmission electron microscope, the investigation was carried out on the micro-region chemical composition of the as-grown amorphous SiO_2 nanowire. The growth mechanism has been discussed, and it has been believed to be extended vapor-liquid-solid process. The SiO_2 layer, as the result indicates, can prevent the formation of Si-Au alloy from Si-Au interface. This work also discusses the photoluminescence emission from SiO_x centers at room temperature, it is found that by changing the oxygen, the photoluminescence intensity can be adjusted.
机译：在环境压力下，在1100°C的条件下，选择性地生长直径20-200 nm和几微米长的无定形SiO_2纳米线，该超薄Au膜涂覆的硅晶片具有扫描电子显微镜，傅立叶变换红外光谱仪和高分辨率透射电子显微镜。使用装备在高分辨率透射电子显微镜上的X射线能量色散光谱仪，对生长的非晶SiO_2纳米线的微区化学成分进行了研究。已经讨论了生长机理，并且据信它是扩展的气液固过程。结果表明，SiO_2层可以防止从Si-Au界面形成Si-Au合金。这项工作还讨论了室温下SiO_x中心的光致发光发射，发现通过改变氧气，可以调节光致发光强度。

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