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Tailoring refractive index of a-Si:H by TBP (C4H11P) doping

机译:通过TBP(C4H11P)掺杂来调整a-Si:H的折射率

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摘要

The refractive index, n, and extinction coefficient, k, of n-type TBP (tetriarybutylphosphine) doped a-Si:H films is reported. TBP is preferred over phosphine because of its lower toxicity and pyrophoricity. The films were deposited using glow discharge (plasma lab mu P) technique. The optical constants, n, k and absorption coefficient, a are determined as functions of wavelength, lambda and doping concentration. The refractive index is found to decrease as the TBP/SiH4 ratio increases from 0.1% to 3%. This decrease is due to increase in the internal strain in amorphous network. Also the refractive index and extinction coefficient decrease with increase in wavelength in the range of 600 to 900 nm.
机译:报道了n型TBP(三丁基丁基膦)掺杂的a-Si:H膜的折射率n和消光系数k。 TBP比膦更可取,因为它具有较低的毒性和自燃性。使用辉光放电(等离子实验室μP)技术沉积膜。光学常数n,k和吸收系数α被确定为波长,λ和掺杂浓度的函数。发现折射率随着TBP / SiH4比从0.1%增加到3%而降低。这种减少是由于非晶网络中内部应变的增加。另外,折射率和消光系数随着波长在600至900nm范围内的增加而降低。

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