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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Analysis of amorphous carbon thin films by spectroscopic ellipsometry
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Analysis of amorphous carbon thin films by spectroscopic ellipsometry

机译：椭圆偏振光谱法分析非晶碳薄膜

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Using spectroscopic ellipsometry (SE), we have measured the optical properties of amorphous carbon (a-C) films similar to 10-30 nm thick prepared using a filtered beam of C+ ions from a cathodic are. Such films exhibit a wide range of sp(3)-bonded carbon contents from 20 to 76 at.% as measured by electron energy loss spectroscopy (EELS), and a range of optical gaps from 0.65 eV (20 at.% sp(3) C) to 2.25 eV (76 at.% sp(3) C) as measured by SE. SE data from 1.5 to 5 eV have been analyzed by applying the most widely used effective medium theory (EMT) namely that of Bruggeman with isotropic screening, assuming a model of the material as a composite with sp(2) C and sp(3) C components. Although the atomic fractions of sp(3) C deduced by SE with the Bruggeman EMT correlate monotonically with those obtained by EELS, the SE results range from 10 to 25 at.% higher. The possible origins of this discrepancy are discussed within the framework of an optical composite. Improved agreement between SE and EELS is obtained by employing a simple form for the EMT, in which the effective dielectric function is determined as a volume-fraction-weighted average of the dielectric functions of the two components. (C) 1998 Elsevier Science B.V. All rights reserved. [References: 28]
机译：使用椭圆偏振光谱法（SE），我们已经测量了非晶碳（a-C）膜的光学特性，该膜的厚度约为10-30 nm，这是通过使用过滤自阴极的C +离子束制备的。通过电子能量损失谱（EELS）测量，此类薄膜的sp（3）键合碳含量范围从20到76 at。％，光学间隙范围从0.65 eV（sp 20原子百分比为20 at。％ C）至2.25 eV（76 at。％sp（3）C），由SE测量。通过应用最广泛使用的有效介质理论（EMT）（即采用各向同性筛选的Bruggeman的有效介质理论）对1.5至5 eV的SE数据进行了分析，假设该材料的模型为sp（2）C和sp（3）的复合材料C组件。尽管SE用Bruggeman EMT推论出sp（3）C的原子分数与EELS获得的原子分数单调相关，但SE的结果却高出10至25 at。％。在光学复合材料的框架内讨论了这种差异的可能来源。 SE和EELS之间的改进一致性是通过将EMT采用简单形式获得的，其中有效介电函数确定为两个组件介电函数的体积分数加权平均值。 （C）1998 Elsevier Science B.V.保留所有权利。 [参考：28]

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