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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Electrical switching behavior of amorphous Al_(23)Te_(77) thin film sample
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Electrical switching behavior of amorphous Al_(23)Te_(77) thin film sample

机译：非晶Al_（23）Te_（77）薄膜样品的电开关行为

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摘要

The electrical switching behavior of amorphous Al_(23)Te _(77) thin film devices, deposited by flash evaporation, has been studied in co-planar geometry. It is found that these samples exhibit memory type electrical switching. Scanning Electron Microscopic studies show the formation of a crystalline filament in the electrode region which is responsible for switching of the device from high resistance OFF state to low resistance ON state. It is also found that the switching behavior of thin film Al-Te samples is similar to that of bulk samples, with the threshold fields of bulk samples being higher. This has been understood on the basis of higher thermal conductance in bulk, which reduces the Joule heating and temperature rise in the electrode region.
机译：在共面几何中研究了通过快速蒸发沉积的非晶Al_（23）Te_（77）薄膜器件的电开关行为。发现这些样本表现出存储器类型的电开关。扫描电子显微镜研究表明，在电极区域中形成了晶体细丝，该细丝负责将器件从高阻态切换为低阻态。还发现，薄膜Al-Te样品的开关行为与本体样品的开关行为相似，其中本体样品的阈值场更高。这是基于较高的整体导热率来理解的，这降低了焦耳加热和电极区域的温度升高。

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