Lateral photovoltage in hydrogenated amorphous silicon

Srivastava A.; Agarwal SC.

首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Lateral photovoltage in hydrogenated amorphous silicon

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Lateral photovoltage in hydrogenated amorphous silicon

机译：氢化非晶硅中的横向光电压

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The variation in the potential difference, observed between two coplanar electrodes on hydrogenated amorphous silicon (a-Si:H) films upon illumination with a laser beam, is studied as a function of the position of illumination, and the temperature of a-Si:H. The results are analysed in the light of diffusion of photogenerated carriers and yield the ratio of the diffusion lengths of electrons and holes. (C) 1998 Elsevier Science B.V. All rights reserved. [References: 10]

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《Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites》 |1998年第1期|共4页
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Srivastava A.; Agarwal SC.;
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正文语种 eng
中图分类晶体学;
关键词
Hydrogenated amorphous silicon; Lateral photovoltage; Dember effect; Diffusion length;

机译：氢化非晶硅;横向光电压;伐伯效应;扩散长度;

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1. Lateral photovoltage measurements in hydrogenated amorphous silicon and silicon-oxygen thin films [J] . Kodolbas AO, Comak B, Bacioglu A, Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites . 2005,第5期

机译：氢化非晶硅和硅氧薄膜中的横向光电压测量
2. Lateral photovoltage in hydrogenated amorphous silicon [J] . Srivastava A., Agarwal SC. Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites . 1998,第Pta1期

机译：氢化非晶硅中的横向光电压
3. Study of surface photovoltage in hydrogenated amorphous silicon [J] . Journal of Applied Physics . 1985,第10期

机译：氢化非晶硅中表面光电压的研究
4. SURFACE PASSIVATION OF CRYSTALLINE SILICON WAFERS BY HYDROGENATED AMORPHOUS SILICON PROBED BY TIME RESOLVED SURFARCE PHOTOVOLTAGE AND PHOTOLUMINESCENCE SPECTROSCOPY [C] . European photovoltaic solar energy conference . 2004

机译：通过定时分辨表面光电电压和光致发光光谱法探测氢化非晶硅晶体硅晶片的表面钝化
5. Proton NMR studies of PECVD hydrogenated amorphous silicon films and HWCVD hydrogenated amorphous silicon films. [D] . Herberg, Julie Lynn. 2002

机译：PECVD氢化非晶硅膜和HWCVD氢化非晶硅膜的质子NMR研究。
6. Enhanced Photoluminescence of Hydrogenated Amorphous Silicon Carbide Thin Films by Means of a Fast Thermal Annealing Process [O] . Israel Vivaldo, Roberto C. Ambrosio, Roberto López, 2020

机译：通过快速热退火工艺增强氢化非晶碳化硅薄膜的光致发光
7. Super sequential lateral growth of Nd:YAG laser crystallized hydrogenated amorphous silicon [O] . Tang Y. F., Silva S. R. P., Rose M. J. 2001

机译：Nd：YAG激光结晶氢化非晶硅的超连续横向生长
8. Preparation and Characterization of Hydrogenated Amorphous-Silicon Films Produced by Ion Plating and Hydrogenated Amorphous-Boron Films Produced by Glow-Discharge Decomposition. Final Report, April 1, 1980-May 31, 1981 [R] . Cocks F.H, Jones, P. L. 1981

机译：添加到阅览室阅读软件下载与<<辉光放电分解制备离子镀和氢化非晶硼薄膜制备氢化非晶硅薄膜及其表征>>相似的文献。最终报告，1980年4月1日至1981年5月31日

Lateral photovoltage in hydrogenated amorphous silicon

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