Mobility fluctuations in hydrogenated amorphous silicon associated with deep defects

Verleg PAWE.; Dijkhuis JI.

首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Mobility fluctuations in hydrogenated amorphous silicon associated with deep defects

【24h】

Mobility fluctuations in hydrogenated amorphous silicon associated with deep defects

机译：与深缺陷相关的氢化非晶硅的迁移率波动

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

A detailed study of noise in hydrogenated amorphous silicon (a-Si:H) shows that resistance fluctuations between 290 K and 430 K are mobility fluctuations and not fluctuations in the number of free carriers. Attempt rate and the average activation energy are determined for the characteristic rate constants. There are strong indications that population and depopulation of deep defects produce the mobility fluctuations. (C) 1998 Elsevier Science B.V. All rights reserved. [References: 16]

著录项

来源
《Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites》 |1998年第1期|共4页
作者
Verleg PAWE.; Dijkhuis JI.;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
Amorphous silicon; Hydrogen; Mobility; Deep defects; 1/f resistance noise; A-si-h; Relaxation; Diffusion; Motion;

机译：非晶硅;氢;迁移率;深缺陷;1 / f电阻噪声;A-si-h;松弛;扩散;运动;

相似文献

外文文献
中文文献
专利

1. Mobility fluctuations in hydrogenated amorphous silicon associated with deep defects [J] . Verleg PAWE., Dijkhuis JI. Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites . 1998,第Pta1期

机译：与深缺陷相关的氢化非晶硅的迁移率波动
2. Intrinsic bonding defects in thin-film non-crystalline solids: Amorphous silicon (a-Si), hydrogenated amorphous silicon (a-Si:H), amorphous selenium (a-Se) and amorphous selenium-arsenic alloys (a-AsxSe1-x) [J] . Lucovsky G Philosophical magazine: structure and properties of condensed matter . 2009,第28a30期

机译：薄膜非晶态固体的内在键合缺陷：非晶硅（a-Si），氢化非晶硅（a-Si：H），非晶硒（a-Se）和非晶硒-砷合金（a-AsxSe1-x ）
3. Coordination defects in amorphous silicon and hydrogenated amorphous silicon: a characterization from first-principles calculations [J] . Peressi M., de Gironcoli S., De Santis L., Philosophical magazine, B. Physics of condensed matter, electronic, optical, and magnetic properties . 2000,第4期

机译：非晶硅和氢化非晶硅中的配位缺陷：第一性原理计算的表征
4. Fluctuating defect density probed with noise spectroscopy in hydrogenated amorphous silicon [C] . P.A.W.E.Verleg, O.Uca, J.I.Dijkhuis Symposium on amorphous and microcrystalline silicon technology . 1997

机译：氢化非晶硅中用噪声光谱探测的波动缺陷密度
5. Proton NMR studies of PECVD hydrogenated amorphous silicon films and HWCVD hydrogenated amorphous silicon films. [D] . Herberg, Julie Lynn. 2002

机译：PECVD氢化非晶硅膜和HWCVD氢化非晶硅膜的质子NMR研究。
6. Enhanced Photoluminescence of Hydrogenated Amorphous Silicon Carbide Thin Films by Means of a Fast Thermal Annealing Process [O] . Israel Vivaldo, Roberto C. Ambrosio, Roberto López, 2020

机译：通过快速热退火工艺增强氢化非晶碳化硅薄膜的光致发光
7. Coordination defects in amorphous silicon and hydrogenated amorphous silicon: a characterization from first-principles calculations [O] . Peressi M, Fornari M, de Gironcoli S, 2000

机译：非晶硅和氢化非晶硅中的配位缺陷：第一性原理计算的表征

Mobility fluctuations in hydrogenated amorphous silicon associated with deep defects

摘要

著录项

相似文献

相关主题

期刊订阅