...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Improvement in the spectral response at long wavelength of a-SiGe : H solar cells by exponential band gap design of the i-layer
【24h】

Improvement in the spectral response at long wavelength of a-SiGe : H solar cells by exponential band gap design of the i-layer

机译：通过i层的指数带隙设计改善a-SiGe：H太阳能电池在长波长下的光谱响应

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

A new band gap profile (exponential profile) for the active layer of the a-SiGc:H single junction cell has been designed and experimentally demonstrated. In this paper we compare its optical and electrical characteristics with the two more common profiles: the U- and V-shapes. As predicted by the simulations, the new profile combines the advantages of both profiles. Like the V-shape, the exponential shape reduces the amount of Ge in the i-layer, decreasing both the space charge defect density inside the i-layer and the recombination losses. It also improves the electric field. At the same time. the exponential shape generates the same current density as the U-shape. (C) 2002 Elsevier Science B.V. All rights reserved. [References: 7]
机译：设计并通过实验证明了a-SiGc：H单结电池活性层的新带隙分布（指数分布）。在本文中，我们将其光学和电学特性与两个更常见的轮廓进行比较：U形和V形。正如仿真所预测的，新配置文件结合了这两个配置文件的优点。像V形一样，指数形减少了i层中的Ge量，既降低了i层内部的空间电荷缺陷密度，又降低了复合损失。它还可以改善电场。同时。指数形状产生的电流密度与U形相同。 （C）2002 Elsevier Science B.V.保留所有权利。 [参考：7]

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号